Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are R

Repetitive Avalanche Rated

文件：345.8 Kbytes Page：10 Pages

HEXFET Power MOSFET

文件：123.55 Kbytes Page：8 Pages

HEXFET Power MOSFET

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are R

HEXFET Power MOSFET

文件：810.17 Kbytes Page：8 Pages

500V N-CHANNEL MOSFET

„ DESCRIPTION The UTC 11N50is an N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance. It also can withstand high energy pulse in the avalanche and commutation mode. The U

11A, 500V N-CHANNEL POWER MOSFET

文件：185.39 Kbytes Page：6 Pages

N-CHANNEL POWER MOSFET

文件：217.08 Kbytes Page：5 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：99.59 Kbytes Page：4 Pages

Power MOSFET

文件：159.78 Kbytes Page：8 Pages