isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 5.5A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.85Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 5.5A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.85Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

文件：265.48 Kbytes Page：2 Pages

HEXFET Power MOSFET

Benefits ● Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● Enhanced body diode dV/dt and dI/dt Capability Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptible Power Supply ● High Speed Power Switching

Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

HEXFET Power MOSFET

Benefits ● Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● Enhanced body diode dV/dt and dI/dt Capability ● Lead-Free Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptible Power Supply ● High Speed Pow

Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

100 V N-Channel MOSFET

Benefits * Improved Gate, Avalanche and Dynamic dV/dt Ruggedness * Fully Characterized Capacitance and Avalanche SOA * Enhanced body diode dV/dt and dI/dt Capability * Lead-Free * RoHS Compliant, Halogen-Free * VDS =100V * ID(at VGS=10V)=97A * RDS(ON) (at VGS=10V)

HEXFET Power MOSFET

Benefits ● Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● Enhanced body diode dV/dt and dI/dt Capability ● Lead-Free Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptible Power Supply ● High Speed Pow

N-Channel Power MOSFET

Application « Motor control and drives « Load switch « Power management « PWM Application

采用 D2-Pak 封装的 100V 单 N 通道 HEXFET 功率 MOSFET

High Efficiency Synchronous Rectification in SMPS

文件：805.55 Kbytes Page：12 Pages

High Efficiency Synchronous Rectification in SMPS

文件：805.55 Kbytes Page：12 Pages

采用 D2-Pak 封装的 100V 单 N 通道 HEXFET 功率 MOSFET

PGA ZIF Test & Burn-in Socket for Any Footprint on Std 8x8 to 21x21 Grid

FEATURES • Strong Metal Cam Activates Normally-closed Contacts, Preventing Dependency on Plastic for Contact Force • Handle mounted on Right- or Left-hand Side • Any Footprint Accepted on Standard 13x13 to 21x21 Grid GENERAL SPECIFICATIONS • SOCKET BODY: black UL 94V-0 Polyphenylene Sulfid

LC2MOS Quad SPST Switches

GENERAL DESCRIPTION The ADG441, ADG442, and ADG444 are monolithic CMOS devices that comprise of four independently selectable switches. They are designed on an enhanced LC2MOS process that provides low power dissipation yet gives high switching speed and low on resistance. FEATURES 44

LC2MOS Quad SPST Switches ADG441/ADG442/ADG444

GENERAL DESCRIPTION The ADG441, ADG442, and ADG444 are monolithic CMOS devices that comprise of four independently selectable switches. They are designed on an enhanced LC2MOS process that provides low power dissipation yet gives high switching speed and low on resistance. FEATURES 44

SURFACE MOUNT FUSES

文件：38.16 Kbytes Page：2 Pages

MINIDIN 6PIN MALE

文件：74.83 Kbytes Page：1 Pages