IRFS4410价格

参考价格:¥9.7373

型号:IRFS4410PBF 品牌:International 备注:这里有IRFS4410多少钱,2025年最近7天走势,今日出价,今日竞价,IRFS4410批发/采购报价,IRFS4410行情走势销售排行榜,IRFS4410报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRFS4410

HEXFET Power MOSFET

Benefits ● Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● Enhanced body diode dV/dt and dI/dt Capability Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptible Power Supply ● High Speed Power Switching

IRF

IRFS4410

Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

ISC

无锡固电

IRFS4410

采用 D2-Pak 封装的 100V 单 N 通道 HEXFET 功率 MOSFET

Infineon

英飞凌

HEXFET Power MOSFET

Benefits ● Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● Enhanced body diode dV/dt and dI/dt Capability ● Lead-Free Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptible Power Supply ● High Speed Pow

IRF

Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

ISC

无锡固电

100 V N-Channel MOSFET

Benefits * Improved Gate, Avalanche and Dynamic dV/dt Ruggedness * Fully Characterized Capacitance and Avalanche SOA * Enhanced body diode dV/dt and dI/dt Capability * Lead-Free * RoHS Compliant, Halogen-Free * VDS =100V * ID(at VGS=10V)=97A * RDS(ON) (at VGS=10V)

UMW

友台半导体

HEXFET Power MOSFET

Benefits ● Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● Enhanced body diode dV/dt and dI/dt Capability ● Lead-Free Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptible Power Supply ● High Speed Pow

IRF

N-Channel Power MOSFET

Application « Motor control and drives « Load switch « Power management « PWM Application

TECHPUBLIC

台舟电子

High Efficiency Synchronous Rectification in SMPS

文件:805.55 Kbytes Page:12 Pages

IRF

High Efficiency Synchronous Rectification in SMPS

文件:805.55 Kbytes Page:12 Pages

IRF

采用 D2-Pak 封装的 100V 单 N 通道 HEXFET 功率 MOSFET

Infineon

英飞凌

N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor

CET

华瑞

N-Channel Enhancement Mode MOSFET

文件:523.71 Kbytes Page:4 Pages

HOTTECH

合科泰

N-Channel 20V (D-S) MOSFET

文件:1.01333 Mbytes Page:9 Pages

VBSEMI

微碧半导体

HEYConnect™ Terminal Bushings

文件:93.68 Kbytes Page:1 Pages

Heyco

N-Channel 20V (D-S) MOSFET

文件:1.00712 Mbytes Page:9 Pages

VBSEMI

微碧半导体

IRFS4410产品属性

  • 类型

    描述

  • 型号

    IRFS4410

  • 功能描述

    MOSFET N-CH 100V 96A D2PAK

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2025-11-18 14:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
D2-Pak
8866
原装
1923+
TO-263
8900
公司原装现货特价长期供货欢迎来电咨询
IR
24+
TO263
7850
只做原装正品现货或订货假一赔十!
INFINEON/英飞凌
22+
TO-263
6805
原装现货
INFINEON
23+
TO-263
10818
全新原装正品现货可开票
IR
2023+
TO-263
2500
全新原装正品,优势价格
INFINEON/英飞凌
25+
TO-263-2
90000
INFINEON/英飞凌全新特价IRFS4410ZTRLPBF即刻询购立享优惠#长期有货
INFINEON/IR
14+
1550
TO-263-3 (D2PAK)
INFINEON
24+
TO-263
5600
原装现正品可看现货
IR
25+
TO-263
9600
百分百原装正品 真实公司现货库存 本公司只做原装 可

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