Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

100 V N-Channel MOSFET

Benefits * Improved Gate, Avalanche and Dynamic dV/dt Ruggedness * Fully Characterized Capacitance and Avalanche SOA * Enhanced body diode dV/dt and dI/dt Capability * Lead-Free * RoHS Compliant, Halogen-Free * VDS =100V * ID(at VGS=10V)=97A * RDS(ON) (at VGS=10V)

采用 D2-Pak 封装的 100V 单 N 通道 HEXFET 功率 MOSFET

HEXFET Power MOSFET

Benefits ● Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● Enhanced body diode dV/dt and dI/dt Capability ● Lead-Free Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptible Power Supply ● High Speed Pow

N-Channel Power MOSFET

Application « Motor control and drives « Load switch « Power management « PWM Application

N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor

HEYConnect™ Terminal Bushings

文件：93.68 Kbytes Page：1 Pages

N-Channel Enhancement Mode MOSFET

文件：523.71 Kbytes Page：4 Pages

N-Channel 20V (D-S) MOSFET

文件：1.01333 Mbytes Page：9 Pages

N-Channel 20V (D-S) MOSFET

文件：1.00712 Mbytes Page：9 Pages