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IRFS38N20DPBF价格
参考价格：￥4.8795
型号：IRFS38N20DPBF 品牌：International 备注：这里有IRFS38N20DPBF多少钱，2025年最近7天走势，今日出价，今日竞价，IRFS38N20DPBF批发/采购报价，IRFS38N20DPBF行情走势销售排行榜，IRFS38N20DPBF报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFS38N20DPBF | HEXFET Power MOSFET Applications • High frequency DC-DC converters • Plasma Display Panel • Lead-Free Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalan | IRF |   | |
IRFS38N20DPbF | HEXFET짰 Power MOSFET 文件：589.27 Kbytes Page：12 Pages | Infineon 英飞凌 | | |
IRFS38N20DPBF | High frequency DC-DC converters 文件：341.87 Kbytes Page：11 Pages | IRF | | |
High frequency DC-DC converters 文件：341.87 Kbytes Page：11 Pages | IRF | | ||
Power MOSFET(Vdss=200V, Rds(on)max=0.054ohm, Id=44A) Applications • High frequency DC-DC converters Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current | IRF | | ||
HEXFET Power MOSFET Applications • High frequency DC-DC converters • Plasma Display Panel • Lead-Free Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalan | IRF | | ||
HEXFET Power MOSFET Applications • High frequency DC-DC converters • Plasma Display Panel • Lead-Free Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalan | IRF | | ||
N-Channel MOSFET Transistor 文件：339.21 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor 文件：339.21 Kbytes Page：2 Pages | ISC 无锡固电 | |
IRFS38N20DPBF产品属性
- 类型
描述
- 型号
IRFS38N20DPBF
- 功能描述
MOSFET 200V 1 N-CH HEXFET 54mOhms 60nC
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
TO-263 |
3065 |
原装正品代理渠道价格优势 |
|||
INFINEON |
24+ |
TO-263 |
8500 |
原厂原包原装公司现货,假一赔十,低价出售 |
|||
IR |
24+ |
TO-263 |
501381 |
免费送样原盒原包现货一手渠道联系 |
|||
IR |
23+ |
TO-263 |
6000 |
原装正品，支持实单 |
|||
IR |
25+ |
TO263 |
880000 |
明嘉莱只做原装正品现货 |
|||
INFINEON |
24+ |
con |
10 |
现货常备产品原装可到京北通宇商城查价格 |
|||
IR |
23+ |
SOT263 |
8000 |
只做原装现货 |
|||
IR |
23+ |
SOT263 |
7000 |
||||
IR |
24+ |
TO-263 |
510 |
只做原厂渠道 可追溯货源 |
|||
IR |
2447 |
TO263 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
IRFS38N20DPBF芯片相关品牌
IRFS38N20DPBF规格书下载地址
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瀚佳科技(深圳）有限公司： 专业销售集成电路IC.单片机.内存闪存.二三级管模块等电子元器件。
2018-12-30
DdatasheetPDF页码索引
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