isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 12.5A@ TC=25℃ · Drain Source Voltage -VDSS= 200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.18Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

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Advanced Power MOSFET (200V, 0.18ohm, 12.8A)

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 200V ■ Lower RDS(ON) : 0.144 Ω(Typ.)

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

Advanced Power MOSFET (200V, 0.18ohm, 12.8A)

200V N-Channel MOSFET

5x25mm MINIATURE FUSES

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MINIATURE FUSES - 5x25mm

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Direct replacement for BA15d

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240W - Single Output AC-DC Converter - Universal Input - Isolated & Regulated Industrial DIN Rail Power Supply

文件：2.06087 Mbytes Page：5 Pages

240W - Single Output AC-DC Converter - Universal Input - Isolated & Regulated Industrial DIN Rail Power Supply

文件：2.06087 Mbytes Page：5 Pages