IRFS23N15价格

参考价格:¥7.2619

型号:IRFS23N15DTRLP 品牌:International 备注:这里有IRFS23N15多少钱,2025年最近7天走势,今日出价,今日竞价,IRFS23N15批发/采购报价,IRFS23N15行情走势销售排行榜,IRFS23N15报价。
型号 功能描述 生产厂家 企业 LOGO 操作

Power MOSFET(Vdss=150V, Rds(on)max=0.090ohm, Id=23A)

Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current Applications High frequency DC-DC converters

IRF

Isc N-Channel MOSFET Transistor

文件:188.69 Kbytes Page:2 Pages

ISC

无锡固电

采用 D2-Pak 封装的 150V 单 N 通道 HEXFET 功率 MOSFET

Infineon

英飞凌

HEXFET짰Power MOSFET

文件:283.59 Kbytes Page:12 Pages

IRF

High frequency DC-DC converters

文件:284.56 Kbytes Page:12 Pages

IRF

High frequency DC-DC converters

文件:284.56 Kbytes Page:12 Pages

IRF

High frequency DC-DC converters

文件:284.56 Kbytes Page:12 Pages

IRF

High frequency DC-DC converters

文件:284.56 Kbytes Page:12 Pages

IRF

Power MOSFET(Vdss=150V, Rds(on)max=0.090ohm, Id=23A)

Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current Applications High frequency DC-DC converters

IRF

Power MOSFET(Vdss=150V, Rds(on)max=0.090ohm, Id=23A)

Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current Applications High frequency DC-DC converters

IRF

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=23A@ TC=25℃ ·Drain Source Voltage -VDSS=150V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.09Ω(Max)@VGS = 10 V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

High frequency DC-DC converters

文件:1.18321 Mbytes Page:11 Pages

KERSEMI

HEXFET짰Power MOSFET

文件:283.59 Kbytes Page:12 Pages

IRF

IRFS23N15产品属性

  • 类型

    描述

  • 型号

    IRFS23N15

  • 功能描述

    MOSFET N-CH 150V 23A D2PAK

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2025-11-3 23:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
2023+
D2-PAK
50000
原装现货
IR
24+
NA/
3298
原装现货,当天可交货,原型号开票
IR
24+
TO-263
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
IR
25+
TO263
54648
百分百原装现货 实单必成 欢迎询价
IR
24+
TO263
990000
明嘉莱只做原装正品现货
IR/VISHAY
20+
D2-PAK
36900
原装优势主营型号-可开原型号增税票
IR
21+
TO-263
1516
十年信誉,只做原装,有挂就有现货!
44
263
IR
10
92
ir
24+
N/A
6980
原装现货,可开13%税票
IR
24+
TO-263
6000
一般纳税人资质,只做原装正品。

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