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IRFR2307Z价格
参考价格:¥4.6091
型号:IRFR2307ZPBF 品牌:INTERNATIONAL 备注:这里有IRFR2307Z多少钱,2025年最近7天走势,今日出价,今日竞价,IRFR2307Z批发/采购报价,IRFR2307Z行情走势销售排行榜,IRFR2307Z报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR2307Z | AUTOMOTIVE MOSFET 文件:300.83 Kbytes Page:11 Pages | IRF | ||
IRFR2307Z | N-Channel MOSFET Transistor 文件:335.36 Kbytes Page:2 Pages | ISC 无锡固电 | ||
IRFR2307Z | Advanced Process Technology 文件:1.17075 Mbytes Page:11 Pages | KERSEMI | ||
IRFR2307Z | 75V 单个 N 通道 HEXFET Power MOSFET, 采用 D-Pak 封装 | Infineon 英飞凌 | ||
Advanced Process Technology 文件:358.34 Kbytes Page:11 Pages | IRF | |||
Advanced Process Technology 文件:358.34 Kbytes Page:11 Pages | IRF | |||
Advanced Process Technology 文件:4.17109 Mbytes Page:11 Pages | KERSEMI | |||
AUTOMOTIVE MOSFET 文件:4.36084 Mbytes Page:11 Pages | KERSEMI | |||
HEXFET짰 Power MOSFET 文件:369.69 Kbytes Page:12 Pages | IRF | |||
Advanced Process Technology 文件:358.34 Kbytes Page:11 Pages | IRF | |||
Advanced Process Technology 文件:4.111229 Mbytes Page:11 Pages | KERSEMI | |||
Advanced Process Technology 文件:358.34 Kbytes Page:11 Pages | IRF | |||
N-Channel 100-V (D-S) MOSFET 文件:1.024819 Mbytes Page:8 Pages | VBSEMI 微碧半导体 | |||
Advanced Process Technology 文件:4.0903 Mbytes Page:11 Pages | KERSEMI | |||
MICROWAVE CW BIPOLAR [ACRIAN INC] GENERAL DESCRIPTION The 2307 is a common base transistor capable of providing 7 Watts CW RF output power at 2300 MHz. This hermetically sealed transistor is specifically designed for telemetry and telcommunications applications. It uiilizes gold metalilzation and diffused ballasting | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
7.0 Watts - 20 Volts, Class C Microwave 2300 MHz GENERAL DESCRIPTION The 2307 is a COMMON BASE transistor capable of providing 7 Watts Class C, RF output power at 2300 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed pa | GHZTECH | |||
Pneumatic muffler 文件:101.63 Kbytes Page:1 Pages | FESTOFesto Corporation. 费斯托费斯托(中国)有限公司 | |||
3M??Masking Tape 2307 文件:131.009 Kbytes Page:5 Pages | 3M | |||
Nylon Hose Clamps 文件:116.22 Kbytes Page:1 Pages | Heyco |
IRFR2307Z产品属性
- 类型
描述
- 型号
IRFR2307Z
- 功能描述
MOSFET N-CH 75V 42A DPAK
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
HEXFET®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道,金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds(最大)@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A,10V Id 时的
- Vgs(th)(最大)
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
TO252 |
10048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
INFINEON/英飞凌 |
24+ |
NA/ |
56250 |
原装现货,当天可交货,原型号开票 |
|||
IR |
24+ |
TO-252 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
IR |
24+ |
TO-252 |
30000 |
原装正品公司现货,假一赔十! |
|||
INFINEON/英飞凌 |
22+ |
TO-252 |
100000 |
代理渠道/只做原装/可含税 |
|||
INFINEON/英飞凌 |
25+ |
D-Pak |
65248 |
百分百原装现货 实单必成 |
|||
Infineon |
2301+ |
TO252 |
10000 |
全新、原装 |
|||
IR |
24+ |
TO-252 |
36000 |
一级代理/全新现货/长期供应! |
|||
IR |
25+23+ |
TO-252 |
14643 |
绝对原装正品全新进口深圳现货 |
|||
INFINEON/英飞凌 |
2023+ |
TO-252 |
1000 |
专注全新正品,优势现货供应 |
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IRFR2307Z规格书下载地址
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IRFR2307Z数据表相关新闻
IRFR15N20DTRPBF
表面贴装型 N 通道 200 V 17A(Tc) 3W(Ta),140W(Tc) D-PAK(TO-252AA)
2022-10-19IRFR13N20DTRPBF
联系人张生 电话19926428992 QQ1924037095
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属性 参数值 商品目录 场效应管(MOSFET) 漏源电压(Vdss) 200V 连续漏极电流(Id) 13A 功率(Pd) 110W 导通电阻(RDS(on)@Vgs,Id) 235mΩ 10V,8A 阈值电压(Vgs(th)@Id) 5.5V 250μA 类型 N沟道
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DdatasheetPDF页码索引
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