Power MOSFET(Vdss=30V, Rds(on)=0.031ohm, Id=33A??

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Power MOSFET(Vdss=30V, Rds(on)=0.031ohm, Id=33A⑤)

1:10 PECL clock distribution device

DESCRIPTION The PTN1111 is a low-skew, 1:10 PECL clock distribution device. One selected clock signal out of two selectable inputs is fanned out to 10 identical, precision time-aligned differential outputs. FEATURES • 80 ps part-to-part skew • 20 ps output-to-output skew • Differential design

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planar transistor For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit boa

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planar transistor For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit boa

Silicon PNP epitaxial planer transistor

For switching/digital circuits ■ Features ● Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) ● Reduction of the mounting area and assembly cost by one half. ■ Basic Part Number of Element ● UN1111 × 2 elements

Photo Interrupters

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