Power MOSFET(Vdss=30V, Rds(on)=0.031ohm, Id=33A??

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Power MOSFET(Vdss=30V, Rds(on)=0.031ohm, Id=33A⑤)

10-bit D-type flip-flop; positive-edge trigger 3-State

DESCRIPTION The 74ABT821 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive. FEATURES • High speed parallel registers with positive edge-triggered D-type flip-flops • Ideal where high speed, light loading, or increased fan-in

Single Color Ultra High Brightness Type

Product Features ● Outer Dimension 1.6 x 0.8 x 0.7mm ( L x W x H ) ● Low Current Type (IF=5mA) ● Temperature Range Storage Temperature： -40℃～ 100℃ Operating Temperature： -40℃～ 85℃ ● Lead-Free Soldering compatible ● RoHS Compliant

Square Air Core Inductors

• Excellent Q factors – 210 at 400 MHz! • Inductance values from 27 to 47 nH • Flat top and bottom for reliable pick and place and mechanical stability

Square Air Core Inductors

文件：344.64 Kbytes Page：3 Pages

Square Air Core Inductors

文件：234.64 Kbytes Page：3 Pages