Power MOSFET(Vdss=150V, Rds(on)=0.015ohm, Id=105A)

Description The HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provid

采用 Super 247（TO-274AA）封装的 150V 单 N 通道 HEXFET 功率 MOSFET

HEXFET Power MOSFET

Description The HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provid

Advanced Process Technology

文件：137.37 Kbytes Page：8 Pages

Advanced Process Technology

文件：137.37 Kbytes Page：8 Pages

SAW Components Low-loss Filter 385,0 MHz

Features ● Low-loss filter for Trunked Radio ● Usable bandwidth 10 MHz ● No matching required for operation at 50 Ω ● Unbalanced to unbalanced or unbalanced to balanced operation ● Package for Surface Mounted Technology (SMT) ● Hermetically sealed ceramic package

AL3815EO is a 15W (per channel) stereo high efficiency Class D audio power amplifier circuit

文件：962.62 Kbytes Page：11 Pages

Mini-ITX Industrial Motherboard

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ALUMINUM NEMA 4X BOX WITH EMI/RFI SHIELDING

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6.1ch Audio Sound Processor

文件：185.01 Kbytes Page：6 Pages