Power MOSFET(Vdss=150V, Rds(on)=0.015ohm, Id=105A)

Description The HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provid

采用 Super 247（TO-274AA）封装的 150V 单 N 通道 HEXFET 功率 MOSFET

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度;

HEXFET Power MOSFET

Description The HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provid

Advanced Process Technology

文件：137.37 Kbytes Page：8 Pages

Advanced Process Technology

文件：137.37 Kbytes Page：8 Pages

Triple Video D/A Converters 3 x 8 bit, 150 Ms/s

Description FMS3810/3815 products are low-cost triple D/A converters that are tailored to fit graphics and video applications where speed is critical. Two speed grades are available: FMS3810 100 Ms/s FMS3815 150 Ms/s TTL-level inputs are converted to analog current outputs that can d

Triple Video D/A Converters 3 x 8 bit, 150 Ms/s

Description FMS3810/3815 products are low-cost triple D/A converters that are tailored to fit graphics and video applications where speed is critical. Two speed grades are available: FMS3810 100 Ms/s FMS3815 150 Ms/s TTL-level inputs are converted to analog current outputs that can d

6-channel volume IC for 6.1-channel

文件：109.14 Kbytes Page：3 Pages

Fast Current Gauge IC with Ultra Low Loss Sense Element and PWM Output

文件：264.08 Kbytes Page：14 Pages