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IRFPG30价格
参考价格：￥6.5285
型号：IRFPG30PBF 品牌：VISHAY 备注：这里有IRFPG30多少钱，2026年最近7天走势，今日出价，今日竞价，IRFPG30批发/采购报价，IRFPG30行情走势销售排行榜，IRFPG30报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFPG30 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude | VISHAYVishay Siliconix 威世威世科技公司 |   | |
IRFPG30 | Power MOSFET(Vdss=1000V, Rds(on)=5.0ohm, Id=3.1A) Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast | IRF | | |
IRFPG30 | Power MOSFET(Vdss=1000V, Rds(on)=5.0ohm, Id=3.1A) | INFINEON 英飞凌 | | |
IRFPG30 | Power MOSFET 文件：993.12 Kbytes Page：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude | VISHAYVishay Siliconix 威世威世科技公司 | | ||
HEXFET짰 Power MOSFET Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast | IRF | | ||
Power MOSFET 文件：993.12 Kbytes Page：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
MOSFET N-CH 1000V HEXFET MOSFET | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：993.12 Kbytes Page：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |
IRFPG30产品属性
- 类型
描述
- 型号
IRFPG30
- 功能描述
MOSFET N-Chan 1000V 3.1 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR/VISHAY |
25+ |
TO-247 |
45000 |
IR/VISHAY全新现货IRFPG30PBF即刻询购立享优惠#长期有排单订 |
|||
IR |
24+/25+ |
25 |
原装正品现货库存价优 |
||||
VISHAY/威世 |
2450+ |
TO-247 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
VISHAY |
2018+ |
26976 |
代理原装现货/特价热卖! |
||||
IR |
2025+ |
TO247 |
3872 |
全新原厂原装产品、公司现货销售 |
|||
Vishay(威世) |
26+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
Vishay |
24+ |
NA |
3282 |
进口原装正品优势供应 |
|||
VISHAY/威世 |
2022+ |
TO-247AC |
8000 |
只做原装支持实单,有单必成。 |
|||
VISHAY/威世 |
26+ |
TO-247 |
8635 |
一级代理优势现货,全新正品直营店 |
|||
VISHAY/威世 |
0621+ |
TO-247 |
3 |
原装进口无铅现货 |
IRFPG30芯片相关品牌
IRFPG30规格书下载地址
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属性 参数值 商品目录 场效应管(MOSFET) 漏源电压(Vdss) 200V 连续漏极电流(Id) 13A 功率(Pd) 110W 导通电阻(RDS(on)@Vgs，Id) 235mΩ 10V，8A 阈值电压(Vgs(th)@Id) 5.5V 250μA 类型 N沟道
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2021-3-12
DdatasheetPDF页码索引
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