WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE

VCES = 600V VCE(on) typ. = 2.00V @ VGE = 15V IC = 33A Equivalent MOSFET Parameters RCE(on) typ. = 61mΩ ID (FET equivalent) = 50A Features • NPT Technology, Positive Temperature Coefficient • Lower VCE(SAT) • Lower Parasitic Capacitances • Minimal Tail Current • H

Power MOSFET

DESCRIPTION Third Generation Power MOSFETs from Vishay provide the designer with best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the u

Power MOSFET(Vdss=800V, Rds(on)=3.0ohm, Id=4.1A)

SMPS MOSFET Applications Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynam

WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE

HEXFET Power MOSFET

DESCRIPTION Third Generation Power MOSFETs from Vishay provide the designer with best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the u

Power MOSFET

DESCRIPTION Third Generation Power MOSFETs from Vishay provide the designer with best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the u

MOSFET N-CH800V HEXFET MOSFET