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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFP9242 | P-CHANNEL POWER MOSFETS FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability | Samsung 三星 |   | |
IRFP9242 | P-CHANNEL POWER MOSFETS FEATURES • Low RDS(on) • Improved Inductive ruggedness • Fast switching times • Rugged polysllicon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
IRFP9242 | P-CHANNEL POWER MOSFETS FEATURES • Low RDS(on) • Improved Inductive ruggedness • Fast switching times • Rugged polysllicon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
Avalanche-Energy-Rated P-Channel Power MOSFETs 文件：178.21 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
NEUTRAL SAFETY AND BACKUP SWITCHES Description Littelfuse Pushpull Switches are designed for universal applications within harsh environments. Their mounting, body, and actuator features are designed for ease-of-use and extended product lifecycle. The Neutral Safety and Backup Series provide momentary and discrete circuit clo | Littelfuse 力特 | | ||
P-CHANNEL POWER MOSFETS FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability | Samsung 三星 | | ||
P-CHANNEL POWER MOSFETS FEATURES • Low RDS(on) • Improved Inductive ruggedness • Fast switching times • Rugged polysllicon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
P-CHANNEL POWER MOSFETS FEATURES • Low RDS(on) • Improved Inductive ruggedness • Fast switching times • Rugged polysllicon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
AFE with Dual 16/14-Bit 1.1MSPS ZDS A/D Converter 文件：214.5 Kbytes Page：2 Pages | AKM 旭化成微电子 | |
IRFP9242产品属性
- 类型
描述
- 型号
IRFP9242
- 制造商
Rochester Electronics LLC
- 功能描述
- Bulk
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
23+ |
TO220 |
28888 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
IR |
23+ |
8000 |
专注配单,只做原装进口现货 |
||||
IR |
06+ |
TO-247 |
550 |
自己公司全新库存绝对有货 |
|||
IR |
24+ |
TO-247 |
5000 |
全现原装公司现货 |
|||
IR |
22+ |
6000 |
终端可免费供样,支持BOM配单 |
||||
IR |
25+ |
TO-247 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
IR |
23+ |
7000 |
IRFP9242规格书下载地址
IRFP9242参数引脚图相关
- l101
- l100
- ku波段
- kt250
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- ks20
- km710
- ka5q1265rf
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- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- IRFR024
- IRFR020
- IRFR014
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- IRFQ110
- IRFPG50
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- IRFPG30
- IRFPF50
- IRFPF40
- IRFPF30
- IRFPE50
- IRFPE40
- IRFPE30
- IRFPC60LC
- IRFPC60
- IRFPC50PBF
- IRFPC50LCPBF
- IRFPC50LC
- IRFPC50APBF
- IRFPC50A
- IRFPC50
- IRFPC48
- IRFPC42R
- IRFPC42
- IRFPC40R
- IRFPC40PBF
- IRFPC40
- IRFPC32
- IRFPC30
- IRFPC 60PBF
- IRFPC 50PBF
- IRFPC 40PBF
- IRFP9242R
- IRFP9241R
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IRFP9242数据表相关新闻
IRFR15N20DTRPBF
表面贴装型 N 通道 200 V 17A（Tc） 3W（Ta），140W（Tc） D-PAK（TO-252AA）
2022-10-19IRFP4668PBF 全新原装现货
IRFP4668PBF
2022-6-27IRFR13N20DTRPBF
联系人张生 电话19926428992 QQ1924037095
2021-10-12IRFR13N20DTRPBF
属性 参数值 商品目录 场效应管(MOSFET) 漏源电压(Vdss) 200V 连续漏极电流(Id) 13A 功率(Pd) 110W 导通电阻(RDS(on)@Vgs，Id) 235mΩ 10V，8A 阈值电压(Vgs(th)@Id) 5.5V 250μA 类型 N沟道
2021-10-12IRFP460PBF
IRFP460PBF
2021-5-20IRFP460PBF 原装正品 现货供应
IRFP460PBF 原装现货供应 0755-28892389 13713856319 QQ:2639752116
2021-3-12
DdatasheetPDF页码索引
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