P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliablility

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -19A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.2Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

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Precision Video Coax, RG59, #20 Solid BC, Double 98 TC/BC Braid

Product Description 20 AWG solid .031 bare copper conductor, polyethylene insulation, tinned copper/bare copper braid shield (98 coverage), polyethylene jacket.

Hall Effect Sensor IC with Reverse Voltage Protection

General Description The APX9141 is an integrated Hall Effect Sensor IC designed for electric commutation of DC brushless motor applications. The APX9141 still can operate at as low as 3 volts. The APX9141 is available in low cost TO -92M4 package with 3 different magnetic ranks. Features

Hall Effect Sensor IC with Reverse Voltage Protection

General Description The APX9141 is an integrated Hall Effect Sensor IC designed for electric commutation of DC brushless motor applications. The APX9141 still can operate at as low as 3 volts. The APX9141 is available in low cost TO -92M4 package with 3 different magnetic ranks. Features

Blunt Rivets

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Blunt Rivets

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