P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -12A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

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Hall Effect Micro Switch IC

General Description The APX9131 integrated circuit is an ultra-sensitive, pole independent Hall-effect switch with a latched digital output. 2.5 volt to3.5 volt operation and a unique clocking scheme reduce the average operating power requirements. Either a north or south pole of sufficient flux

Hall Effect Micro Switch IC

General Description The APX9131 integrated circuit is an ultra-sensitive, pole independent Hall-effect switch with a latched digital output. 2.5 volt to3.5 volt operation and a unique clocking scheme reduce the average operating power requirements. Either a north or south pole of sufficient flux

Three independent and electrically isolated outputs

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Programmable Triple Output DC Power Supplies

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Hall Effect Micro Switch IC

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