P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -12A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

P-CHANNEL POWER MOSFETS

isc N-Channel MOSFET Transistor

文件：271.85 Kbytes Page：2 Pages

Hall Effect Micro Switch IC

General Description The APX9131 integrated circuit is an ultra-sensitive, pole independent Hall-effect switch with a latched digital output. 2.5 volt to3.5 volt operation and a unique clocking scheme reduce the average operating power requirements. Either a north or south pole of sufficient flux

Hall Effect Micro Switch IC

General Description The APX9131 integrated circuit is an ultra-sensitive, pole independent Hall-effect switch with a latched digital output. 2.5 volt to3.5 volt operation and a unique clocking scheme reduce the average operating power requirements. Either a north or south pole of sufficient flux

Three independent and electrically isolated outputs

文件：511.42 Kbytes Page：4 Pages

Programmable Triple Output DC Power Supplies

文件：511.42 Kbytes Page：4 Pages

Hall Effect Micro Switch IC

文件：211.84 Kbytes Page：14 Pages