16A, 400V, 0.300 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

Power MOSFET(Vdss=400V, Rds(on)=0.30ohm, Id=16A)

DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels

N-CHANNEL POWER MOSFETS

FEATURES ● Low RDS(on) ● Improved Inducttive ruggedness ● Fast switching times ● Rugged polysilicon gate cell structure ● Low input capacitance ● Extended safe operating area ● Improved high temperature reliability ● TO-3P package

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Isolated central mounting hole • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides inf

16A, 400V, 0.300 Ohm, N-Channel Power MOSFET

Power MOSFET

Power MOSFET(Vdss=400V, Rds(on)=0.30ohm, Id=16A)

SEMICONDUCTORS

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Power MOSFET

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Power MOSFET

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isc N-Channel MOSFET Transistor

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N-Channel Power Mosfet

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Power MOSFET

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Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Isolated central mounting hole • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides inf

Advanced Power MOSFET

FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V ♦ Low RDS(ON): 0.254Ω (Typ.)

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 17A@ TC=25℃ • Drain Source Voltage- : VDSS= 400V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) • Fast Switching

Power MOSFET(Vdss=400V, Rds(on)=0.30ohm, Id=16A)

Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. The

Power MOSFET

FEATURES • Ultra low gate charge • Reduced gate drive requirement • Enhanced 30 VGS rating • Reduced Ciss, Coss, Crss • Isolated central mounting hole • Dynamic dV/dt rated • Repetitive avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc?

Power MOSFET

FEATURES • Ultra low gate charge • Reduced gate drive requirement • Enhanced 30 VGS rating • Reduced Ciss, Coss, Crss • Isolated central mounting hole • Dynamic dV/dt rated • Repetitive avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc?

Power MOSFET

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Power MOSFET

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isc N-Channel MOSFET Transistor

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isc N-Channel MOSFET ransistor

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Power MOSFET

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Power MOSFET

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Power MOSFET

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Power MOSFET

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Power MOSFET

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Power MOSFET

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HEXFET짰 Power MOSFET

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Power MOSFET

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isc N-Channel MOSFET Transistor

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SWITCHMODE??Power Rectifirers DPAK Surface Mount Package

SWITCHMODE Power Rectifiers DPAK Surface Mount Package . . . designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. These state–of–the–art devices have the following features: • Extremel

SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS 15 WATTS

High Voltage Power Transistors DPAK For Surface Mount Applications Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic

0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS

Plastic Medium Power NPN Silicon Transistor . . . designed for use in line–operated applications such as low power, line–operated series pass and switching regulators requiring PNP capability. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 300 Vdc @ IC = 1.0 mAdc • Ex

3-Amp Adjustable Regulators

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3-Amp Adjustable Regulators

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