IRFP350价格

参考价格:¥47.1517

型号:IRFP350 品牌:Vishay 备注:这里有IRFP350多少钱,2025年最近7天走势,今日出价,今日竞价,IRFP350批发/采购报价,IRFP350行情走势销售排行榜,IRFP350报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRFP350

16A, 400V, 0.300 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

Intersil

IRFP350

Power MOSFET(Vdss=400V, Rds(on)=0.30ohm, Id=16A)

DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels

IRF

IRFP350

N-CHANNEL POWER MOSFETS

FEATURES ● Low RDS(on) ● Improved Inducttive ruggedness ● Fast switching times ● Rugged polysilicon gate cell structure ● Low input capacitance ● Extended safe operating area ● Improved high temperature reliability ● TO-3P package

Samsung

三星

IRFP350

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Isolated central mounting hole • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides inf

VishayVishay Siliconix

威世科技威世科技半导体

IRFP350

SEMICONDUCTORS

文件:2.43533 Mbytes Page:31 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

IRFP350

Power MOSFET

文件:1.61166 Mbytes Page:11 Pages

VishayVishay Siliconix

威世科技威世科技半导体

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N-Channel Power Mosfet

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IRFP350

Power MOSFET

文件:1.5891 Mbytes Page:9 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Isolated central mounting hole • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides inf

VishayVishay Siliconix

威世科技威世科技半导体

Advanced Power MOSFET

FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V ♦ Low RDS(ON): 0.254Ω (Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 17A@ TC=25℃ • Drain Source Voltage- : VDSS= 400V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) • Fast Switching

ISC

无锡固电

Power MOSFET

FEATURES • Ultra low gate charge • Reduced gate drive requirement • Enhanced 30 VGS rating • Reduced Ciss, Coss, Crss • Isolated central mounting hole • Dynamic dV/dt rated • Repetitive avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc?

VishayVishay Siliconix

威世科技威世科技半导体

Power MOSFET(Vdss=400V, Rds(on)=0.30ohm, Id=16A)

Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. The

IRF

Power MOSFET

FEATURES • Ultra low gate charge • Reduced gate drive requirement • Enhanced 30 VGS rating • Reduced Ciss, Coss, Crss • Isolated central mounting hole • Dynamic dV/dt rated • Repetitive avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc?

VishayVishay Siliconix

威世科技威世科技半导体

Power MOSFET

文件:1.5891 Mbytes Page:9 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Power MOSFET

文件:1.61166 Mbytes Page:11 Pages

VishayVishay Siliconix

威世科技威世科技半导体

isc N-Channel MOSFET Transistor

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Power MOSFET

文件:1.98549 Mbytes Page:8 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Power MOSFET

文件:1.33852 Mbytes Page:11 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Power MOSFET

文件:1.33852 Mbytes Page:11 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Power MOSFET

文件:1.98549 Mbytes Page:8 Pages

VishayVishay Siliconix

威世科技威世科技半导体

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文件:891.45 Kbytes Page:8 Pages

IRF

Power MOSFET

文件:1.56932 Mbytes Page:8 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Power MOSFET

文件:1.61166 Mbytes Page:11 Pages

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isc N-Channel MOSFET Transistor

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Low Inductance, Radial, Aluminum Electrolytic High Frequency, Solid Aluminum Top

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CDE

Celeron M Processor on 90 nm Process

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Intel

英特尔

9x14mm Differential PECL High Frequency VCXO(416MHz to 832MHz)

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CTSCTS Electronic Components

西迪斯西迪斯公司

HEADER STRIPS .100??Grid Solder Tail Single Row

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MILL-MAX

Mill-Max Manufacturing Corp.

Celeron D Processor

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Intel

英特尔

IRFP350产品属性

  • 类型

    描述

  • 型号

    IRFP350

  • 功能描述

    MOSFET N-Chan 400V 16 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-8-31 22:38:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY(威世)
23+
N/A
23500
最新到货,只做原装进口
VISHAY
24+
VQFN
7850
只做原装正品现货或订货假一赔十!
IR
25+23+
TO-247
25043
绝对原装正品全新进口深圳现货
HARRIC
22+
TO-3P
100000
代理渠道/只做原装/可含税
IR
25+
管3P
18000
原厂直接发货进口原装
IR
20+
原装模块
368
样品可出,原装现货
IR
24+
TO 3P
161008
明嘉莱只做原装正品现货
VISHAY
23+
TO-247
19567
Ir
25+
SOP
3200
全新原装、诚信经营、公司现货销售
VISHAY/威世
24+
TO-247
10000
只做原装欢迎含税交易,假一赔十,放心购买

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