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IRFP350价格
参考价格:¥47.1517
型号:IRFP350 品牌:Vishay 备注:这里有IRFP350多少钱,2025年最近7天走势,今日出价,今日竞价,IRFP350批发/采购报价,IRFP350行情走势销售排行榜,IRFP350报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
IRFP350 | 16A, 400V, 0.300 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching | Intersil | ||
IRFP350 | Power MOSFET(Vdss=400V, Rds(on)=0.30ohm, Id=16A) DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels | IRF | ||
IRFP350 | N-CHANNEL POWER MOSFETS FEATURES ● Low RDS(on) ● Improved Inducttive ruggedness ● Fast switching times ● Rugged polysilicon gate cell structure ● Low input capacitance ● Extended safe operating area ● Improved high temperature reliability ● TO-3P package | Samsung 三星 | ||
IRFP350 | Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Isolated central mounting hole • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides inf | VishayVishay Siliconix 威世科技威世科技半导体 | ||
IRFP350 | SEMICONDUCTORS 文件:2.43533 Mbytes Page:31 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | ||
IRFP350 | Power MOSFET 文件:1.61166 Mbytes Page:11 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | ||
IRFP350 | Power MOSFET 文件:1.56932 Mbytes Page:8 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | ||
IRFP350 | isc N-Channel MOSFET Transistor 文件:67.81 Kbytes Page:2 Pages | ISC 无锡固电 | ||
IRFP350 | N-Channel Power Mosfet 文件:637.84 Kbytes Page:6 Pages | ARTSCHIP | ||
IRFP350 | Power MOSFET 文件:1.5891 Mbytes Page:9 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | ||
Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Isolated central mounting hole • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides inf | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Advanced Power MOSFET FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V ♦ Low RDS(ON): 0.254Ω (Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
isc N-Channel MOSFET Transistor DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 17A@ TC=25℃ • Drain Source Voltage- : VDSS= 400V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) • Fast Switching | ISC 无锡固电 | |||
Power MOSFET FEATURES • Ultra low gate charge • Reduced gate drive requirement • Enhanced 30 VGS rating • Reduced Ciss, Coss, Crss • Isolated central mounting hole • Dynamic dV/dt rated • Repetitive avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc? | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Power MOSFET(Vdss=400V, Rds(on)=0.30ohm, Id=16A) Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. The | IRF | |||
Power MOSFET FEATURES • Ultra low gate charge • Reduced gate drive requirement • Enhanced 30 VGS rating • Reduced Ciss, Coss, Crss • Isolated central mounting hole • Dynamic dV/dt rated • Repetitive avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc? | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Power MOSFET 文件:1.5891 Mbytes Page:9 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Power MOSFET 文件:1.61166 Mbytes Page:11 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
isc N-Channel MOSFET Transistor 文件:70.04 Kbytes Page:2 Pages | ISC 无锡固电 | |||
isc N-Channel MOSFET ransistor 文件:409.62 Kbytes Page:2 Pages | ISC 无锡固电 | |||
Power MOSFET 文件:1.33852 Mbytes Page:11 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Power MOSFET 文件:1.98549 Mbytes Page:8 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Power MOSFET 文件:1.33852 Mbytes Page:11 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Power MOSFET 文件:1.33852 Mbytes Page:11 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Power MOSFET 文件:1.98549 Mbytes Page:8 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
HEXFET짰 Power MOSFET 文件:891.45 Kbytes Page:8 Pages | IRF | |||
Power MOSFET 文件:1.56932 Mbytes Page:8 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Power MOSFET 文件:1.61166 Mbytes Page:11 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
isc N-Channel MOSFET Transistor 文件:67.82 Kbytes Page:2 Pages | ISC 无锡固电 | |||
Low Inductance, Radial, Aluminum Electrolytic High Frequency, Solid Aluminum Top 文件:182.95 Kbytes Page:4 Pages | CDE | |||
Celeron M Processor on 90 nm Process 文件:879.41 Kbytes Page:68 Pages | Intel 英特尔 | |||
9x14mm Differential PECL High Frequency VCXO(416MHz to 832MHz) 文件:105.86 Kbytes Page:2 Pages | CTSCTS Electronic Components 西迪斯西迪斯公司 | |||
HEADER STRIPS .100??Grid Solder Tail Single Row 文件:116.48 Kbytes Page:1 Pages | MILL-MAX Mill-Max Manufacturing Corp. | |||
Celeron D Processor 文件:1.75778 Mbytes Page:82 Pages | Intel 英特尔 |
IRFP350产品属性
- 类型
描述
- 型号
IRFP350
- 功能描述
MOSFET N-Chan 400V 16 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
VISHAY(威世) |
23+ |
N/A |
23500 |
最新到货,只做原装进口 |
|||
VISHAY |
24+ |
VQFN |
7850 |
只做原装正品现货或订货假一赔十! |
|||
IR |
25+23+ |
TO-247 |
25043 |
绝对原装正品全新进口深圳现货 |
|||
HARRIC |
22+ |
TO-3P |
100000 |
代理渠道/只做原装/可含税 |
|||
IR |
25+ |
管3P |
18000 |
原厂直接发货进口原装 |
|||
IR |
20+ |
原装模块 |
368 |
样品可出,原装现货 |
|||
IR |
24+ |
TO 3P |
161008 |
明嘉莱只做原装正品现货 |
|||
VISHAY |
23+ |
TO-247 |
19567 |
||||
Ir |
25+ |
SOP |
3200 |
全新原装、诚信经营、公司现货销售 |
|||
VISHAY/威世 |
24+ |
TO-247 |
10000 |
只做原装欢迎含税交易,假一赔十,放心购买 |
IRFP350规格书下载地址
IRFP350参数引脚图相关
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- IRFP254PBF
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- IRFP251
- IRFP250
- IRFP247
- IRFP246
- IRFP245
- IRFP244
- IRFP240
- IRFP153
- IRFP152
- IRFP151
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