HIGH VOLTAGE POWER MOSFET DIE

FEATURES: ● Fast switching times ● LOW RDS(on) HDMOS™ process ● Rugged polyslllcon gate cell structure ● Excellent high voltage stability ● Low input capacitance ● Improved high temperature reliability APPLICATIONS ● Switching power supplies ● Motor controls ● Audio Amplifiers ● Inver

Trans MOSFET 60V 33A 3-Pin(3+Tab) TO-3P

isc N-Channel MOSFET Transistor

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VHF variable capacitance diode

DESCRIPTION The BB153 is a planar technology variable capacitance diode, in a SOD323 very small plastic SMD package. The excellent matching performance is achieved by gliding matching and a direct matching assembly procedure. FEATURES • Excellent linearity • Excellent matching to 2 DMA • Very

Silicon epitaxial planar type

Silicon epitaxial planar type For switching circuits ■ Features • Small terminal capacitance Ct • Two diodes are connected in series in the package

Programmable logic arrays 18 횞 42 횞 10

DESCRIPTION The PLS153 and PLS153A are two-level logic elements, consisting of 42 AND gates and 10 OR gates with fusible link connections for programming I/O polarity and direction. FEATURES •Field-Programmable (Ni-Cr links) •8 inputs •42 AND gates •10 OR gates •10 bidirecti

Programmable logic arrays 18 횞 42 횞 10

DESCRIPTION The PLUS153 PLDs are high speed, combinatorial Programmable Logic Arrays. The Philips Semiconductors state-of-the-art Oxide Isolated Bipolar fabrication process is employed to produce propagation delays as short as 12ns. FEATURES • I/O propagation delays (worst case) – PLUS153B

L-BAND SPDT SWITCH

DESCRIPTION The UPG153TB and UPG155TB are L-band SPDT (Single Pole Double Throw) GaAs FET switches for digital cellular or cordless telephone application. The devices can operate from 100 MHz to 2.5 GHz with low insertion loss. These devices are housed in an original 6 pin super mini-mold package