N?밅HANNEL POWER MOSFET

FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT – EFFICIENT USE OF PCB SPACE. • SIMPLE DRIVE REQUIREMENTS • LIGHTWEIGHT • HIGH PACKING DENSITIES

POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.100ohm, Id=27.4A)

RDS(on) 0.100 Ω ID 27.4A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-estab

Simple Drive Requirements

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HiRel MOSFETs

Simple Drive Requirements

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N-CHANNEL POWER MOSFET

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Commercial Composition 9mm Diameter Variable Resistors

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High peak current carrying capability up to 6000A

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DC axial fans

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DC axial fans

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DC axial fans

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