POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.077ohm, Id=28A)

RDS(on) 0.077Ω ID 28A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-establi

Simple Drive Requirements

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高可靠性功率 MOSFET

Simple Drive Requirements

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N-CHANNEL POWER MOSFET

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MOSFETs and JFETs

1/2 (12.7 mm) Single - Turn Wirewound Bushing Mount Type Precision Potentiometer

FEATURES • Ohmic value range: 50  up to 20 k • Smallest size available: 12.7 mm • Mechanical stops on request • High torque and sealed versions available • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

RUGGED and LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

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THREADED INSERT, BLIND, REGULAR HEAD STYLE MEDIUM DUTY

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Mechanical stops on request

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Temperature Sensors Line Guide

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