POWER MOSFET N-CHANNEL(BVdss=60V, Rds(on)=0.040ohm, Id=44A)

RDS(on) 0.04 Ω ID 44A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established

Simple Drive Requirements

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Simple Drive Requirements

Simple Drive Requirements

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MOSFETs and JFETs

N-CHANNEL POWER MOSFET

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Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=57A)

Description Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels

N-CHANNEL POWER MOSFET

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N-CHANNEL POWER MOSFET

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N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

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