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IRFL9014TR价格

参考价格:¥0.8817

型号:IRFL9014TRPBF 品牌:VISHAY 备注:这里有IRFL9014TR多少钱,2026年最近7天走势,今日出价,今日竞价,IRFL9014TR批发/采购报价,IRFL9014TR行情走势销售排行榜,IRFL9014TR报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRFL9014TR

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniq

VISHAYVishay Siliconix

威世威世科技公司

IRFL9014TR

丝印代码:IRFL9014;-60V P-Channel MOSFET

Description The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pickand- place as with other SOT or SOP packages but has the added advantage of improved thermal performance due to

EVVOSEMI

翊欧

P-Channel 60-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 UIS Tested APPLICATIONS • Load Switch

VBSEMI

微碧半导体

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniq

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:174.72 Kbytes Page:8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:174.72 Kbytes Page:8 Pages

VISHAYVishay Siliconix

威世威世科技公司

NPN SILICON TRANSISTOR

FEATURES Power dissipation PCM : 0.4 W (Tamb=25°C) Collector current ICM : 0.1 A Collector-base voltage V(BR)CBO : 50 V

WINGS

永盛电子

NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications?????????

NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications

SEMTECH

先之科

Pre-Amplifier, Low Level & Low Noise

Pre-Amplifier, Low Level & Low Noise • High total power dissipation. (PT = 450mW) • High hFE and good linearity • Complementary to SS9015

FAIRCHILD

仙童半导体

Advanced Power MOSFET

FEATURES ❐ Avalanche Rugged Technology ❐ Rugged Gate Oxide Technology ❐ Lower Input Capacitance ❐ Improved Gate Charge ❐ Extended Safe Operating Area ❐ Lower Leakage Current : 10 µA (Max.) @ VDS = -60V ❐ Lower RDS(ON) : 0.362 Ω (Typ.)

FAIRCHILD

仙童半导体

Pre-Amplifier, Low Level & Low Noise

Pre-Amplifier, Low Level & Low Noise • High total power dissipation. (PT = 450mW) • High hFE and good linearity • Complementary to SS9015

FAIRCHILD

仙童半导体

IRFL9014TR产品属性

  • 类型

    描述

  • 型号

    IRFL9014TR

  • 功能描述

    MOSFET P-Chan 60V 1.1 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-8-5 8:45:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY
1633+01+
SOT-223
2015
上传都是百分之百进口原装现货
VISHAY(威世)
23+
N/A
23500
最新到货,只做原装进口
VISHAY
24+
N/A
10000
只做原装,实单最低价支持
VISHAY
25+
SOT-223-3
12880
原装,诚信经营
Vishay(威世)
26+
SOT-223-4
10548
原厂订货渠道,支持账期,一站式服务!
VISHAY/威世
24+
10000
现货现货现货,滚动式排单供货
IR
25+
SOT-223
35669
IR全新特价IRFL9014TRPBF即刻询购立享优惠#长期有货
IR
2025+
N/A
70000
柒号只做原装 现货价秒杀全网
VISHAY
24+
SOT-223-3
8540
只做原装正品现货或订货假一赔十!
VISHAY
26+
SOT-223
20540
保证进口原装现货假一赔十

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