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IRFIBE20G价格
参考价格：￥9.1595
型号：IRFIBE20GPBF 品牌：Vishay 备注：这里有IRFIBE20G多少钱，2025年最近7天走势，今日出价，今日竞价，IRFIBE20G批发/采购报价，IRFIBE20G行情走势销售排行榜，IRFIBE20G报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFIBE20G | Power MOSFET(Vdss=800V, Rds(on)=6.5ohm, Id=1.4A) DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industri | IRF |   | |
IRFIBE20G | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat | VishayVishay Siliconix 威世科技威世科技半导体 | | |
IRFIBE20G | iscN-Channel MOSFET Transistor • DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(ON) =6.5Ω (MAX) • Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | |
IRFIBE20G | Power MOSFET 文件：915.46 Kbytes Page：10 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | |
HEXFET Power MOSFET Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industri | IRF | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET(Vdss=800V, Rds(on)=6.5ohm, Id=1.4A) DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industri | IRF | | ||
Power MOSFET 文件：915.46 Kbytes Page：10 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET 文件：915.46 Kbytes Page：10 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |
IRFIBE20G产品属性
- 类型
描述
- 型号
IRFIBE20G
- 功能描述
MOSFET N-Chan 800V 1.4 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY(威世) |
24+ |
TO-220 |
7828 |
支持大陆交货,美金交易。原装现货库存。 |
|||
IR |
24+ |
NA/ |
21000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IR |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
|||
原厂原包 |
24+ |
原装 |
38560 |
原装进口现货,工厂客户可以放款。17377264928微信同 |
|||
VISHAY/威世 |
2022+ |
TO-220F |
30000 |
进口原装现货供应,原装 假一罚十 |
|||
IR |
2023+ |
TO-220F |
50000 |
原装现货 |
|||
VISHAY |
25+23+ |
TO-220F |
15777 |
绝对原装正品全新进口深圳现货 |
|||
IR |
TO-220F |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
IR/VISHAY |
25+ |
TO-220F |
45000 |
IR/VISHAY全新现货IRFIBE20GPBF即刻询购立享优惠#长期有排单订 |
|||
VISHAY/威世 |
24+ |
6000 |
只做原厂渠道 可追溯货源 |
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DdatasheetPDF页码索引
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