Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-6.1A)

Description Third Generation HEXFETs International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial ap

HEXFET power MOSFET. VDSS = -200V, RDS(on) = 0.50 Ohm, ID = -6.1 A

Power MOSFET

FEATURES • Isolated package • High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to lead creepage distance = 4.8 mm • P-channel • Dynamic dV/dt rating • Low thermal resistance • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESC

Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-6.1A)

Description Third Generation HEXFETs International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial ap

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat

Power MOSFET

FEATURES • Isolated package • High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to lead creepage distance = 4.8 mm • P-channel • Dynamic dV/dt rating • Low thermal resistance • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESC

HEXFET Power MOSFET

Description Third Generation HEXFETs International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial ap

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat

Power MOSFET

文件：1.66467 Mbytes Page：8 Pages

Power MOSFET

文件：1.66467 Mbytes Page：8 Pages

MOSFET P-CH -200V HEXFET MOSFET

HEXFET Power MOSFET

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

Advanced Power MOSFET

BVDSS = -200 V RDS(on) = 0.5 W ID= -11 A FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower Leakage Current : -10 mA (Max.) @ VDS = -200V ● Low RDS(ON) : 0.344 W (Typ.)

Advanced Power MOSFET

BVDSS = -200 V RDS(on) = 0.5Ω ID = -11 A FEATURES ❑ Avalanche Rugged Technology ❑ Rugged Gate Oxide Technology ❑ Lower Input Capacitances ❑ Improved Gate Charge ❑ Extended Safe Operating Area ❑ Lower Leakage Current : -10uA (Max.) @ VDS= -200V ❑ Lower RDS(ON) : 0.383 Ω (Typ.)

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 mA (Max.) @ VDS = -200V ■ Low RDS(ON) : 0.344 Ω (Typ.)

Advanced Power MOSFET

文件：261.81 Kbytes Page：7 Pages