P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs

These are P-Channel enhancement mode silicon-gate power field-effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • P-channel • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts

Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-11A)

VDSS = -200V RDS(on) = 0.50 Ohm ID = -11A

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -11A@ TC=25℃ ·Drain Source Voltage -VDSS= -200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.5Ω(Max)@VGS= -10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved Inductive ruggedness • Fast switching times • Rugged polysllicon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved Inductive ruggedness • Fast switching times • Rugged polysllicon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability

11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs

Features • 11A, 200V • r DS(ON) = 0.500 Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to

11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs

These are P-Channel enhancement mode silicon-gate power field-effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as s • 11A, 200V\n• rDS(ON) = 0.500Ω\n• Single Pulse Avalanche Energy Rated\n• SOA is Power Dissipation Limited\n• Nanosecond Switching Speeds\n• Linear Transfer Characteristics\n• High Input Impedance\n• Related Literature\n- TB334, “Guidelines for Soldering Surface Mount\nComponents to PC Boards”;

Power MOSFET

• Dynamic dV/dt rating\n• Repetitive avalanche rated\n• P-channel;

HEXFET Power MOSFET.

VDSS = -200V\nRDS(on) = 0.50 Ohm\nID = -11A

SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

Power MOSFET

文件：272.54 Kbytes Page：9 Pages

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • P-channel • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • P-channel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides inform

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation

Hexfet Power Mosfet

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • P-channel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides inform

Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-11A)

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • P-channel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides inform

HEXFET짰Power MOSFET

Power MOSFET

文件：272.54 Kbytes Page：9 Pages

Power MOSFET

文件：197.87 Kbytes Page：10 Pages

Power MOSFET

文件：197.87 Kbytes Page：10 Pages

Power MOSFET

文件：272.54 Kbytes Page：9 Pages

Power MOSFET

文件：197.87 Kbytes Page：10 Pages

Power MOSFET

文件：197.87 Kbytes Page：10 Pages

isc P-Channel MOSFET Transistor

文件：372.86 Kbytes Page：2 Pages

Power MOSFET

文件：197.87 Kbytes Page：10 Pages

Power MOSFET

文件：197.87 Kbytes Page：10 Pages

Advanced Power MOSFET

BVDSS = -200 V RDS(on) = 0.5 W ID= -11 A FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower Leakage Current : -10 mA (Max.) @ VDS = -200V ● Low RDS(ON) : 0.344 W (Typ.)

Advanced Power MOSFET

BVDSS = -200 V RDS(on) = 0.5Ω ID = -11 A FEATURES ❑ Avalanche Rugged Technology ❑ Rugged Gate Oxide Technology ❑ Lower Input Capacitances ❑ Improved Gate Charge ❑ Extended Safe Operating Area ❑ Lower Leakage Current : -10uA (Max.) @ VDS= -200V ❑ Lower RDS(ON) : 0.383 Ω (Typ.)

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 mA (Max.) @ VDS = -200V ■ Low RDS(ON) : 0.344 Ω (Typ.)

Advanced Power MOSFET

文件：261.81 Kbytes Page：7 Pages