IRFI840G价格

参考价格:¥5.7781

型号:IRFI840GLCPBF 品牌:VISHAY 备注:这里有IRFI840G多少钱,2025年最近7天走势,今日出价,今日竞价,IRFI840G批发/采购报价,IRFI840G行情走势销售排行榜,IRFI840G报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRFI840G

Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=4.6A)

IRF1840G -> Correct Partumber IRFI840G 1. Isolated Package 2. High Voltage Isolation = 2.5VKRMS 3. Sink to Lead Creepage Dist = 4.8 mm 4. Low Thermal Resistance

IRF

IRFI840G

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS(t = 60 s,f = 60 Hz) • Sink

VishayVishay Siliconix

威世威世科技公司

IRFI840G

Power MOSFET

文件:1.54981 Mbytes Page:10 Pages

VishayVishay Siliconix

威世威世科技公司

IRFI840G

HEXFET Power MOSFET (-55V, 0.1ohm, -14A)

文件:122.02 Kbytes Page:8 Pages

IRF

IRFI840G

HEXFET Power MOSFET (-55V, 0.1ohm, -14A)

Infineon

英飞凌

Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=4.5A)

DESCRIPTION This new series of Low Charge Power HEXFETs achieve significantly lower gate charge over conventional HEXFETs. Utilizing advanced Power MOSFET technology, the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. The

IRF

Power MOSFET

DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFET technology, the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. The

VishayVishay Siliconix

威世威世科技公司

HEXFET Power MOSFET

DESCRIPTION This new series of Low Charge HEXFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced HEXFET technology, the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device im

IRF

Power MOSFET

DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFET technology, the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. The

VishayVishay Siliconix

威世威世科技公司

HEXFET짰 Power MOSFET

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS(t = 60 s,f = 60 Hz) • Sink

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:1.54981 Mbytes Page:10 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:958.66 Kbytes Page:10 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:958.66 Kbytes Page:10 Pages

VishayVishay Siliconix

威世威世科技公司

HEXFET Power MOSFET

Infineon

英飞凌

Power MOSFET

文件:958.66 Kbytes Page:10 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:1.54981 Mbytes Page:10 Pages

VishayVishay Siliconix

威世威世科技公司

N-Channel 650V (D-S) Power MOSFET

文件:2.39062 Mbytes Page:11 Pages

VBSEMI

微碧半导体

Surface Mount Zener Diodes

Features ● lat Handling Surface for Accurate Placement ● tandard Zener Breakdown Voltage Range -3.3V to 68V ● ow Profile Package

KEXIN

科信电子

8A 500V N-channel Enhancement Mode Power MOSFET

文件:1.63311 Mbytes Page:12 Pages

WXDH

东海半导体

9Amps竊?00V N-CHANNEL MOSFET

文件:122.87 Kbytes Page:5 Pages

KIA

可易亚半导体

8A竊?00V N-CHANNEL MOSFET

文件:215.89 Kbytes Page:6 Pages

KIA

可易亚半导体

8A 500V N-CHANNEL MOSFET

文件:242.9 Kbytes Page:7 Pages

KIA

可易亚半导体

IRFI840G产品属性

  • 类型

    描述

  • 型号

    IRFI840G

  • 功能描述

    MOSFET N-Chan 500V 4.6 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-11-22 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
NA/
171
优势代理渠道,原装正品,可全系列订货开增值税票
IR
24+
TO220
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
IR
19+
TO-220
35000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
IR
24+
TO 220F
161176
明嘉莱只做原装正品现货
IR
23+
TO-220
187474
原厂授权一级代理,专业海外优势订货,价格优势、品种
INTERNATIONA
23+
TO220
9888
专做原装正品,假一罚百!
IR
25+23+
TO-220F
15071
绝对原装正品全新进口深圳现货
IR
23+
TO-220F
65400
IR
24+
TO-220FullPak(Iso)
8866
IR
25+
68
公司优势库存 热卖中!!

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