IRFI840G价格

参考价格:¥5.7781

型号:IRFI840GLCPBF 品牌:VISHAY 备注:这里有IRFI840G多少钱,2024年最近7天走势,今日出价,今日竞价,IRFI840G批发/采购报价,IRFI840G行情走势销售排行榜,IRFI840G报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRFI840G

PowerMOSFET(Vdss=500V,Rds(on)=0.85ohm,Id=4.6A)

IRF1840G->CorrectPartumberIRFI840G 1.IsolatedPackage 2.HighVoltageIsolation=2.5VKRMS 3.SinktoLeadCreepageDist=4.8mm 4.LowThermalResistance

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRFI840G

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES •IsolatedPackage •HighVoltageIsolation=2.5kVRMS(t=60s,f=60Hz) •Sink

VishayVishay Siliconix

威世科技

Vishay
IRFI840G

PowerMOSFET

文件:1.54981 Mbytes Page:10 Pages

VishayVishay Siliconix

威世科技

Vishay
IRFI840G

HEXFETPowerMOSFET(-55V,0.1ohm,-14A)

文件:122.02 Kbytes Page:8 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET(Vdss=500V,Rds(on)=0.85ohm,Id=4.5A)

DESCRIPTION ThisnewseriesofLowChargePowerHEXFETsachievesignificantlylowergatechargeoverconventionalHEXFETs.UtilizingadvancedPowerMOSFETtechnology,thedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.The

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETtechnology,thedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.The

VishayVishay Siliconix

威世科技

Vishay

HEXFETPowerMOSFET

DESCRIPTION ThisnewseriesofLowChargeHEXFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedHEXFETtechnology,thedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.Thesedeviceim

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETtechnology,thedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.The

VishayVishay Siliconix

威世科技

Vishay

HEXFET짰PowerMOSFET

ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES •IsolatedPackage •HighVoltageIsolation=2.5kVRMS(t=60s,f=60Hz) •Sink

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:1.54981 Mbytes Page:10 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:958.66 Kbytes Page:10 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:958.66 Kbytes Page:10 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:958.66 Kbytes Page:10 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:1.54981 Mbytes Page:10 Pages

VishayVishay Siliconix

威世科技

Vishay

N-Channel650V(D-S)PowerMOSFET

文件:2.39062 Mbytes Page:11 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

SurfaceMountZenerDiodes

Features ●latHandlingSurfaceforAccuratePlacement ●tandardZenerBreakdownVoltageRange-3.3Vto68V ●owProfilePackage

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

8A500VN-channelEnhancementModePowerMOSFET

文件:1.63311 Mbytes Page:12 Pages

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体科技有限公司

WXDH

9Amps竊?00VN-CHANNELMOSFET

文件:122.87 Kbytes Page:5 Pages

KIAGuangdong Keyia Semiconductor Technology Co., Ltd

可易亚半导体广东可易亚半导体科技有限公司

KIA

8A竊?00VN-CHANNELMOSFET

文件:215.89 Kbytes Page:6 Pages

KIAGuangdong Keyia Semiconductor Technology Co., Ltd

可易亚半导体广东可易亚半导体科技有限公司

KIA

8A500VN-CHANNELMOSFET

文件:242.9 Kbytes Page:7 Pages

KIAGuangdong Keyia Semiconductor Technology Co., Ltd

可易亚半导体广东可易亚半导体科技有限公司

KIA

IRFI840G产品属性

  • 类型

    描述

  • 型号

    IRFI840G

  • 功能描述

    MOSFET N-Chan 500V 4.6 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2024-5-29 10:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon(英飞凌)
23+
TO-220F
21316
正规渠道,免费送样。支持账期,BOM一站式配齐
ir
dc08
原厂封装
50
INSTOCK:50/tube/ito
INFINEON/英飞凌
24+
TO-220F
5000
原装正品
VISHAY/威世
22+
TO220
47664
郑重承诺只做原装进口货
IR
23+24
TO-220F
59630
主营原装MOS,二三级管,肖特基,功率场效应管
IR
1950+
TO-220
9852
只做原装正品现货!或订货假一赔十!
IR
0708+
TO-220F
19
VISHAY/威世
TO220
28533
原盒原标,正品现货 诚信经营 价格美丽 假一罚十!
INFINEON/英飞凌
23+
TO-220F
89630
当天发货全新原装现货
IR
12+
TO-220F
27
旗舰店

IRFI840G芯片相关品牌

  • 3M
  • AVX
  • GSI
  • MA-COM
  • MARL
  • MORNSUN
  • PAIRUI
  • PCA
  • PF
  • RENESAS
  • TTELEC
  • XFMRS

IRFI840G数据表相关新闻