-6.5A, -100V, 0.300 Ohm, P-Channel Power MOSFET

-6.5A, -100V, 0.300 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs

POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A)

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET ®TRANSISTORS THRU-HOLE - TO-205AF (TO-39) The HEXFET®technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low

Avalanche-Energy-Rated P-Channel Power MOSFETs

-5.5A and -6.5A, -60Vand-100V rDS(on) = 0.30Ω and 0.40Ω The IRFF9130, IRFF9131, IRFF9132 and IRFF9133 are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are p-channel enhancement-mode silicon-gat

高可靠性功率 MOSFET

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P-CHANNEL POWER MOSFET

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-6.5A, -100V, 0.300 Ohm, P-Channel Power MOSFET

MOSFETs and JFETs

P-Channel MOSFET in a Hermetically sealed TO39

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P-CHANNEL POWER MOSFET

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P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

TC9130P 4CH INDEPENDENT CYCLIC TYPE TOUCH SWITCH

P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

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P-CHANNEL POWER MOSFET

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