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IRFBE30价格
参考价格：￥23.7214
型号：IRFBE30 品牌：Vishay 备注：这里有IRFBE30多少钱，2025年最近7天走势，今日出价，今日竞价，IRFBE30批发/采购报价，IRFBE30行情走势销售排行榜，IRFBE30报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFBE30 | Power MOSFET(Vdss=800V, Rds(on)=3.0ohm, Id=4.1A) Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. O Dynamic dv/dt Rating O Repetitive Avalanche Rated O Fast Switching O Ease of Pa | IRF |   | |
IRFBE30 | Dynamic dV/dt Rating Repetitive Avalanche Rated DESCRIPTION The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. FEATURES • Dynam | KERSEMI | | |
IRFBE30 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=4.1A@ TC=25℃ ·Drain Source Voltage- VDSS=800V(Min) ·Static Drain-Source On-Resistance RDS(on) = 3Ω(Max)@VGS= 10V ·100 avalanche tested DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
IRFBE30 | Power MOSFET 文件：585.44 Kbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
IRFBE30 | Power MOSFET 文件：1.45144 Mbytes Page：8 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
IRFBE30 | Power MOSFET 文件：1.60026 Mbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
IRFBE30 | Power MOSFET | VishayVishay Siliconix 威世威世科技公司 | | |
IRFBE30 | HEXFET® Power MOSFET | Infineon 英飞凌 | | |
Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are R | VishayVishay Siliconix 威世威世科技公司 | | ||
HEXFET짰 Power MOSFET Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. O Dynamic dv/dt Rating O Repetitive Avalanche Rated O Fast Switching O Ease of Pa | IRF | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of P | VishayVishay Siliconix 威世威世科技公司 | | ||
HEXFET Power MOSFET Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. O Dynamic dv/dt Rating O Repetitive Avalanche Rated O Fast Switching O Ease of Pa | IRF | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of P | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are R | VishayVishay Siliconix 威世威世科技公司 | | ||
HEXFET짰 Power MOSFET Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. O Dynamic dv/dt Rating O Repetitive Avalanche Rated O Fast Switching O Ease of Pa | IRF | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of P | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are R | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are R | VishayVishay Siliconix 威世威世科技公司 | | ||
HEXFET Power MOSFET Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. O Dynamic dv/dt Rating O Repetitive Avalanche Rated O Fast Switching O Ease of Pa | IRF | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of P | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are R | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of P | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are R | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.60026 Mbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：585.44 Kbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：511.66 Kbytes Page：11 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：511.66 Kbytes Page：11 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.45144 Mbytes Page：8 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
isc N-Channel MOSFET Transistor 文件：309.79 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Power MOSFET 文件：511.66 Kbytes Page：11 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：511.66 Kbytes Page：11 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：511.66 Kbytes Page：11 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：511.66 Kbytes Page：11 Pages | VishayVishay Siliconix 威世威世科技公司 | |
IRFBE30产品属性
- 类型
描述
- 型号
IRFBE30
- 功能描述
MOSFET 800V Single N-Channel HEXFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
2016+ |
TO220 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
VISHAY/威世 |
25+ |
TO-220 |
32360 |
VISHAY/威世全新特价IRFBE30PBF即刻询购立享优惠#长期有货 |
|||
sil |
23+ |
NA |
406 |
专做原装正品,假一罚百! |
|||
IR |
24+ |
TO 220 |
161347 |
明嘉莱只做原装正品现货 |
|||
IR |
1026+ |
TO-220 |
25 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IR |
18+ |
TO-220AB |
28065 |
全新原装现货,可出样品,可开增值税发票 |
|||
VISHAY |
24+ |
TO-220 |
20540 |
保证进口原装现货假一赔十 |
|||
95 |
220 |
VISHAY/威世 |
15 |
92 |
|||
IR |
24+ |
TO220 |
200 |
大批量供应优势库存热卖 |
|||
IR |
24+ |
SMD |
20000 |
一级代理原装现货假一罚十 |
IRFBE30规格书下载地址
IRFBE30参数引脚图相关
- l101
- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- IRFD121
- IRFD120
- IRFD113
- IRFD112
- IRFD110PBF
- IRFD110
- IRFD024PBF
- IRFD024
- IRFD022
- IRFD020PBF
- IRFD020
- IRFD014PBF
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- IRFD012
- IRFD010PBF
- IRFD010
- IRFC450
- IRFC350
- IRFC250
- IRFC240
- IRFC150
- IRFBG30PBF
- IRFBG30
- IRFBG20PBF
- IRFBG20
- IRFBF30PBF
- IRFBF30
- IRFBF20STRRPBF
- IRFBF20STRLPBF
- IRFBF20SPBF
- IRFBF20PBF
- IRFBF20LPBF
- IRFBF20
- IRFBE30STRLPBF
- IRFBE30SPBF
- IRFBE30PBF
- IRFBE30LPBF
- IRFBE20PBF
- IRFBE20
- IRFBC42
- IRFBC40STRLPBF
- IRFBC40PBF
- IRFBC40LCPBF
- IRFBC40ASTRLPBF
- IRFBC40ASPBF
- IRFBC40APBF
- IRFBC40
- IRFBC30STRLPBF
- IRFBC30SPBF
- IRFBC30PBF
- IRFBC30ASPBF
- IRFBC30APBF
- IRFBC30ALPBF
- IRFBC30A
- IRFBC30
- IRFBC20SPBF
- IRFBC20PBF
- IRFBC20
- IRFBA90N20DPBF
- IRFB812
- IRFB260
- IRFAG50
- IRFAG40
- IRFAG30
- IRFAF50
- IRFAF40
- IRFAF30
- IRFAE50
- IRFAE40
- IRFAE30
- IRFAC42
- IRFAC40
- IRFAC30
- IRF9Z34
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2019-5-5
DdatasheetPDF页码索引
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