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IRFBE30L价格
参考价格：￥5.9901
型号：IRFBE30LPBF 品牌：Vishay 备注：这里有IRFBE30L多少钱，2025年最近7天走势，今日出价，今日竞价，IRFBE30L批发/采购报价，IRFBE30L行情走势销售排行榜，IRFBE30L报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFBE30L | Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are R | VishayVishay Siliconix 威世威世科技公司 |   | |
IRFBE30L | HEXFET짰 Power MOSFET Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. O Dynamic dv/dt Rating O Repetitive Avalanche Rated O Fast Switching O Ease of Pa | IRF | | |
IRFBE30L | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of P | VishayVishay Siliconix 威世威世科技公司 | | |
IRFBE30L | Power MOSFET 文件：511.66 Kbytes Page：11 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
IRFBE30L | Power MOSFET | VishayVishay Siliconix 威世威世科技公司 | | |
IRFBE30L | HEXFET® Power MOSFET | Infineon 英飞凌 | | |
HEXFET Power MOSFET Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. O Dynamic dv/dt Rating O Repetitive Avalanche Rated O Fast Switching O Ease of Pa | IRF | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of P | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are R | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：511.66 Kbytes Page：11 Pages | VishayVishay Siliconix 威世威世科技公司 | |
IRFBE30L产品属性
- 类型
描述
- 型号
IRFBE30L
- 功能描述
MOSFET N-Chan 800V 4.1 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
24+ |
NA/ |
4239 |
原装现货,当天可交货,原型号开票 |
|||
VISHAY |
20+ |
na |
65790 |
原装优势主营型号-可开原型号增税票 |
|||
VISHAY/威世 |
25+ |
TO262 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
VISHAY/威世 |
24+ |
TO262 |
990000 |
明嘉莱只做原装正品现货 |
|||
VISHAY |
08+ |
SOT-262 |
989 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IR |
25+23+ |
TO-262 |
27799 |
绝对原装正品全新进口深圳现货 |
|||
IR |
2015+ |
TO-220 |
19889 |
一级代理原装现货,特价热卖! |
|||
IR |
24+ |
TO-262 |
8866 |
||||
VISHAY |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
IR |
06+ |
原厂原装 |
1001 |
只做全新原装真实现货供应 |
IRFBE30L芯片相关品牌
IRFBE30L规格书下载地址
IRFBE30L参数引脚图相关
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DdatasheetPDF页码索引
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