IRFBE30L价格

参考价格:¥5.9901

型号:IRFBE30LPBF 品牌:Vishay 备注:这里有IRFBE30L多少钱,2026年最近7天走势,今日出价,今日竞价,IRFBE30L批发/采购报价,IRFBE30L行情走势销售排行榜,IRFBE30L报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRFBE30L

HEXFET짰 Power MOSFET

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. O Dynamic dv/dt Rating O Repetitive Avalanche Rated O Fast Switching O Ease of Pa

IRF

IRFBE30L

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of P

VISHAYVishay Siliconix

威世威世科技公司

IRFBE30L

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are R

VISHAYVishay Siliconix

威世威世科技公司

IRFBE30L

Power MOSFET

文件:511.66 Kbytes Page:11 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFBE30L

Power MOSFET

VISHAYVishay Siliconix

威世威世科技公司

IRFBE30L

HEXFET® Power MOSFET

INFINEON

英飞凌

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of P

VISHAYVishay Siliconix

威世威世科技公司

HEXFET Power MOSFET

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. O Dynamic dv/dt Rating O Repetitive Avalanche Rated O Fast Switching O Ease of Pa

IRF

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are R

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:511.66 Kbytes Page:11 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFBE30L产品属性

  • 类型

    描述

  • 型号

    IRFBE30L

  • 功能描述

    MOSFET N-Chan 800V 4.1 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-3-17 8:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
23+
TO-262
7000
VISHAY
原厂封装
9800
原装进口公司现货假一赔百
IR
25+
TO-262
10000
原装现货假一罚十
VISHAY/威世
24+
TO262
990000
明嘉莱只做原装正品现货
VISHAY/威世
2026+
TO262
54648
百分百原装现货 实单必成 欢迎询价
VISHAY
20+
na
65790
原装优势主营型号-可开原型号增税票
VISHAY
08+
SOT-262
989
一级代理,专注军工、汽车、医疗、工业、新能源、电力
Vishay Siliconix
22+
TO2623 Long Leads I2Pak TO262A
9000
原厂渠道,现货配单
IR
25+23+
TO-262
27799
绝对原装正品全新进口深圳现货
IR
06+
原厂原装
1001
只做全新原装真实现货供应

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