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IRFBC20价格
参考价格：￥17.7547
型号：IRFBC20 品牌：Vishay 备注：这里有IRFBC20多少钱，2026年最近7天走势，今日出价，今日竞价，IRFBC20批发/采购报价，IRFBC20行情走势销售排行榜，IRFBC20报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFBC20 | Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoH | VISHAYVishay Siliconix 威世威世科技公司 |   | |
IRFBC20 | Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A)
| IRF | | |
IRFBC20 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation | KERSEMI | | |
IRFBC20 | Power MOSFET • Dynamic dV/dt rating\n• Repetitive avalanche rated\n• Fast switching; | VISHAYVishay Siliconix 威世威世科技公司 | | |
IRFBC20 | Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A) | INFINEON 英飞凌 | | |
IRFBC20 | iscN-Channel MOSFET Transistor 文件：328.39 Kbytes Page：2 Pages | ISC 无锡固电 | | |
IRFBC20 | Power MOSFET 文件：2.10734 Mbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
IRFBC20 | Power MOSFET 文件：1.65144 Mbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoH | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A) Description Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes up to HEX-4. It | IRF | | ||
Power MOSFET Surface-mount (IRFBC20S, SiHFBC20S)\nLow-profile through-hole (IRFBC20L, SiHFBC20L)\nAvailable in tape and reel (IRFBC20, SiiHFBC20S); | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Surface-mount (IRFBC20S, SiHFBC20S) • Low-profile through-hole (IRFBC20L, SiHFBC20L) • Available in tape and reel (IRFBC20, SiiHFBC20S) • Dynamic dV/dt rating • 150 °C operating temperature • Fast switching • Fully avalanche rated • Material categorization: for definitions of co | VISHAYVishay Siliconix 威世威世科技公司 | | ||
HEXFET Power MOSFET Description Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes up to HEX-4. It | IRF | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation | KERSEMI | | ||
Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A) Description Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes up to HEX-4. It | IRF | | ||
Power MOSFET FEATURES • Surface-mount (IRFBC20S, SiHFBC20S) • Low-profile through-hole (IRFBC20L, SiHFBC20L) • Available in tape and reel (IRFBC20, SiiHFBC20S) • Dynamic dV/dt rating • 150 °C operating temperature • Fast switching • Fully avalanche rated • Material categorization: for definitions of co | VISHAYVishay Siliconix 威世威世科技公司 | | ||
HEXFET Power MOSFET Description Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes up to HEX-4. It | IRF | | ||
Power MOSFET FEATURES • Surface-mount (IRFBC20S, SiHFBC20S) • Low-profile through-hole (IRFBC20L, SiHFBC20L) • Available in tape and reel (IRFBC20, SiiHFBC20S) • Dynamic dV/dt rating • 150 °C operating temperature • Fast switching • Fully avalanche rated • Material categorization: for definitions of co | VISHAYVishay Siliconix 威世威世科技公司 | | ||
HEXFET Power MOSFET Description Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes up to HEX-4. It | IRF | | ||
HEXFET Power MOSFET Description Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes up to HEX-4. It | IRF | | ||
Power MOSFET 文件：1.65144 Mbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：247.05 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：247.05 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：329.76 Kbytes Page：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：2.10734 Mbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：247.05 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：329.76 Kbytes Page：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：329.76 Kbytes Page：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：329.76 Kbytes Page：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：247.05 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：247.05 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：247.05 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：329.76 Kbytes Page：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |
IRFBC20产品属性
- 类型
描述
- 型号
IRFBC20
- 功能描述
MOSFET N-Chan 600V 2.2 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
19+ |
TO220 |
5000 |
全新原装深圳现货价格优势 |
|||
VISHAY |
25+ |
TO-220 |
20540 |
保证进口原装现货假一赔十 |
|||
VISHAY/威世 |
25+ |
TO-220 |
22000 |
原装现货假一罚十 |
|||
VISHAY |
22+ |
原厂封装 |
15850 |
原装正品，实单请联系 |
|||
VISHAY |
23+ |
TO-220 |
65400 |
||||
VISHAY/威世 |
25+ |
TO-220 |
5715 |
只做原装 有挂有货 假一罚十 |
|||
VISHAY |
2025+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
VISHAY |
2021+ |
TO-220AB |
9450 |
原装现货。 |
|||
VISHAY/威世 |
25+ |
TO-220 |
32360 |
VISHAY/威世全新特价IRFBC20PBF即刻询购立享优惠#长期有货 |
|||
VISHAY |
21+ |
9000 |
TO-220-3 |
IRFBC20规格书下载地址
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DdatasheetPDF页码索引
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