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IRFBC20价格
参考价格：￥17.7547
型号：IRFBC20 品牌：Vishay 备注：这里有IRFBC20多少钱，2025年最近7天走势，今日出价，今日竞价，IRFBC20批发/采购报价，IRFBC20行情走势销售排行榜，IRFBC20报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFBC20 | Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A)
| IRF |   | |
IRFBC20 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation | KERSEMI | | |
IRFBC20 | Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoH | VishayVishay Siliconix 威世科技 | | |
IRFBC20 | iscN-Channel MOSFET Transistor 文件：328.39 Kbytes Page：2 Pages | ISC 无锡固电 | | |
IRFBC20 | Power MOSFET 文件：1.65144 Mbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | |
IRFBC20 | Power MOSFET | VishayVishay Siliconix 威世科技 | | |
IRFBC20 | Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A) | Infineon 英飞凌 | | |
IRFBC20 | Power MOSFET 文件：2.10734 Mbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | |
Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoH | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A) Description Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes up to HEX-4. It | IRF | | ||
Power MOSFET FEATURES • Surface-mount (IRFBC20S, SiHFBC20S) • Low-profile through-hole (IRFBC20L, SiHFBC20L) • Available in tape and reel (IRFBC20, SiiHFBC20S) • Dynamic dV/dt rating • 150 °C operating temperature • Fast switching • Fully avalanche rated • Material categorization: for definitions of co | VishayVishay Siliconix 威世科技 | | ||
HEXFET Power MOSFET Description Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes up to HEX-4. It | IRF | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation | KERSEMI | | ||
Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A) Description Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes up to HEX-4. It | IRF | | ||
Power MOSFET FEATURES • Surface-mount (IRFBC20S, SiHFBC20S) • Low-profile through-hole (IRFBC20L, SiHFBC20L) • Available in tape and reel (IRFBC20, SiiHFBC20S) • Dynamic dV/dt rating • 150 °C operating temperature • Fast switching • Fully avalanche rated • Material categorization: for definitions of co | VishayVishay Siliconix 威世科技 | | ||
HEXFET Power MOSFET Description Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes up to HEX-4. It | IRF | | ||
Power MOSFET FEATURES • Surface-mount (IRFBC20S, SiHFBC20S) • Low-profile through-hole (IRFBC20L, SiHFBC20L) • Available in tape and reel (IRFBC20, SiiHFBC20S) • Dynamic dV/dt rating • 150 °C operating temperature • Fast switching • Fully avalanche rated • Material categorization: for definitions of co | VishayVishay Siliconix 威世科技 | | ||
HEXFET Power MOSFET Description Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes up to HEX-4. It | IRF | | ||
HEXFET Power MOSFET Description Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes up to HEX-4. It | IRF | | ||
Power MOSFET 文件：1.65144 Mbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET 文件：247.05 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET 文件：247.05 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET 文件：329.76 Kbytes Page：11 Pages | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET 文件：2.10734 Mbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET 文件：247.05 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET 文件：329.76 Kbytes Page：11 Pages | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET 文件：329.76 Kbytes Page：11 Pages | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET 文件：247.05 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET 文件：329.76 Kbytes Page：11 Pages | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET 文件：247.05 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET 文件：247.05 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET 文件：329.76 Kbytes Page：11 Pages | VishayVishay Siliconix 威世科技 | |
IRFBC20产品属性
- 类型
描述
- 型号
IRFBC20
- 功能描述
MOSFET N-Chan 600V 2.2 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
TO-220 |
7828 |
支持大陆交货,美金交易。原装现货库存。 |
|||
IR |
24+ |
TO-262 |
501152 |
免费送样原盒原包现货一手渠道联系 |
|||
VISHAY/威世 |
24+ |
TO-220 |
1146 |
只做原厂渠道 可追溯货源 |
|||
VISHAY |
16+ |
TO-220 |
36000 |
原装正品,优势库存81 |
|||
IR |
24+ |
原厂封装 |
1000 |
原装现货假一罚十 |
|||
IR |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
|||
VISHAY |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
VISHAY/威世 |
24+ |
TO-220 |
5715 |
只做原装 有挂有货 假一罚十 |
|||
IR |
2015+ |
TO-220AB |
12500 |
全新原装,现货库存长期供应 |
|||
IR |
1923+ |
TO-220 |
6896 |
原装进口现货库存专业工厂研究所配单供货 |
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IRFBC20规格书下载地址
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2019-5-5
DdatasheetPDF页码索引
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