位置:IRFBC20L > IRFBC20L详情

IRFBC20L中文资料

厂家型号

IRFBC20L

文件大小

310.72Kbytes

页面数量

11

功能描述

Power MOSFET

MOSFET N-Chan 600V 2.2 Amp

数据手册

下载地址一下载地址二到原厂下载

简称

VISHAY威世科技

生产厂商

Vishay Siliconix

中文名称

官网

IRFBC20L数据手册规格书PDF详情

FEATURES

• Surface-mount (IRFBC20S, SiHFBC20S)

• Low-profile through-hole (IRFBC20L, SiHFBC20L)

• Available in tape and reel (IRFBC20, SiiHFBC20S)

• Dynamic dV/dt rating

• 150 °C operating temperature

• Fast switching

• Fully avalanche rated

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Note

* This datasheet provides information about parts that are

RoHS-compliant and / or parts that are non RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details

DESCRIPTION

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The D2PAK is a surface-mount power package capable of

the accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible

on-resistance in any existing surface-mount package. The

D2PAK is suitable for high current applications because of

its low internal connection resistance and can dissipate up

to 2.0 W in a typical surface-mount application. The

through-hole version (IRFBC20L, SiHFBC20L) is a available

for low-profile applications.

IRFBC20L产品属性

  • 类型

    描述

  • 型号

    IRFBC20L

  • 功能描述

    MOSFET N-Chan 600V 2.2 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2021-9-14 10:50:00
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