Power MOSFET

FEATURES • Surface-mount (IRFBC20S, SiHFBC20S) • Low-profile through-hole (IRFBC20L, SiHFBC20L) • Available in tape and reel (IRFBC20, SiiHFBC20S) • Dynamic dV/dt rating • 150 °C operating temperature • Fast switching • Fully avalanche rated • Material categorization: for definitions of co

Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A)

Description Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes up to HEX-4. It

Power MOSFET

Surface-mount (IRFBC20S, SiHFBC20S)\nLow-profile through-hole (IRFBC20L, SiHFBC20L)\nAvailable in tape and reel (IRFBC20, SiiHFBC20S);

Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A)

Power MOSFET

文件：247.05 Kbytes Page：8 Pages

HEXFET Power MOSFET

Description Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes up to HEX-4. It

Power MOSFET

文件：247.05 Kbytes Page：8 Pages

Power MOSFET

文件：329.76 Kbytes Page：11 Pages