Power MOSFET

FEATURES • Surface-mount (IRFBC20S, SiHFBC20S) • Low-profile through-hole (IRFBC20L, SiHFBC20L) • Available in tape and reel (IRFBC20, SiiHFBC20S) • Dynamic dV/dt rating • 150 °C operating temperature • Fast switching • Fully avalanche rated • Material categorization: for definitions of co

Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A)

Description Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes up to HEX-4. It

Power MOSFET

文件：247.05 Kbytes Page：8 Pages

Power MOSFET

Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A)

HEXFET Power MOSFET

Description Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes up to HEX-4. It

Power MOSFET

文件：247.05 Kbytes Page：8 Pages

Power MOSFET

文件：329.76 Kbytes Page：11 Pages