Power MOSFET(Vdss=40V, Rds(on)=3.7mohm, Id=206A)

Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Benefits Advanced Process Technology Ultra Low On-Resistance Increas

HEXFET® Power MOSFET

Power MOSFET(Vdss=40V, Rds(on)=3.7mohm, Id=206A)

Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Benefits Advanced Process Technology Ultra Low On-Resistance Increas

AUTOMOTIVE MOSFET HEXFET짰 Power MOSFET

Description This Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this MOSFET are a 175°C junction operating temperature, fast switching speed and improved ruggedness in single

采用 Super 220（TO-273AA）封装的 40V 单 N 通道 HEXFET 功率 MOSFET

Advanced Process Technology

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Advanced Process Technology

文件：205.2 Kbytes Page：10 Pages

Primary Standard Capacitor

Features: NEW 5 nF and 10 nF now available A national laboratory standard For calibrating working standards Standard for dissipation factor Available in 10, 100 and 1000 pF 20 ppm/year stability, typically better Hermetically sealed in dry nitrogen

Precision Lab Standard N Connectors

Features o Precision Connector - Interface dimensions per MIL-STD-348 Test connector o Rugged Construction - Numerically controlled machining is used to produce high quality uniform parts with controlled concentricity and surface finishes. The result is excellent SWR repeatability.

It looks like a servo

文件：115.89 Kbytes Page：2 Pages

250A竊?0V N-CHANNEL MOSFET

文件：147.17 Kbytes Page：6 Pages

ALUMINUM CHASSIS

文件：109.8 Kbytes Page：1 Pages