Power MOSFET(Vdss=40V, Rds(on)=3.7mohm, Id=206A)

Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Benefits Advanced Process Technology Ultra Low On-Resistance Increas

采用 Super 220（TO-273AA）封装的 40V 单 N 通道 HEXFET 功率 MOSFET

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度\n ;

AUTOMOTIVE MOSFET HEXFET짰 Power MOSFET

Description This Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this MOSFET are a 175°C junction operating temperature, fast switching speed and improved ruggedness in single

Advanced Process Technology

文件：205.2 Kbytes Page：10 Pages

Advanced Process Technology

文件：205.2 Kbytes Page：10 Pages

Fm Stereo Transmitter

Fm Stereo Transmitter

PRECISION LOW DRIFT VOLTAGE REFERENCES

Voltage Reference Family The MC1404 of ICs is a family of temperature–compensated voltage references for precision data conversion applications, such as A/D, D/A, V/F, and F/V. Advances in laser–trimming and ion–implanted devices, as well as monolithic fabrication techniques, make these devices s

SURFACE MOUNT SWITCHING DIODES

Case : SOT-23 Molded Plastic Operating Temperature : -65°C to 150°C

Integrated Circuit TV Sound IF Amplifier, Detector, AF Output Circuit

Description: The NTE1404 is an integrated circuit in a 16–Lead DIP w/Fin type package designed for use as a TV sound signal processing circuit. Features: • Provides Total TV Sound Signal Processing Circuitry from IF Amplifier through AF Output • DC Volume Control System: Control Volt