位置：首页 > IC中文资料 > IRFB9N65APBF.
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFB9N65APBF. | SMPS MOSFET HEXFET® Power MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current Applications ● Switch Mode Power Supply (SMPS) ● Uninterruptible Power Supply ● | IRF |   | |
N-Channel 650V (D-S) Power MOSFET 文件：1.10568 Mbytes Page：10 Pages | VBSEMI 微碧半导体 | | ||
Fast Switching Speed 文件：67.88 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
9A, 650V N-CHANNEL POWER MOSFET 文件：177.83 Kbytes Page：5 Pages | UTC 友顺 | | ||
9A 650V N-channel enhancement mode field effect transistor 文件：961.5 Kbytes Page：6 Pages | YFWDIODE 佑风微 | | ||
N-Channel 650V (D-S) Power MOSFET 文件：1.10567 Mbytes Page：10 Pages | VBSEMI 微碧半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY(威世) |
24+ |
TO220 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
IR |
24+ |
Super-220trade-3( |
3526 |
||||
IR |
23+ |
TO-263 |
7000 |
||||
Infineon |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
IR |
20+ |
TO-273 |
38900 |
原装优势主营型号-可开原型号增税票 |
|||
IR |
22+ |
TO-263 |
6000 |
终端可免费供样,支持BOM配单 |
|||
Vishay |
NEW- |
MOSFETs |
100000 |
IRFB9N65APBF-BE3 |
|||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
IR |
23+ |
TO-220 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
VISHAY/威世 |
24+ |
TO-220 |
6000 |
只做原装，欢迎询价，量大价优 |
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IRFB9N65APBF.规格书下载地址
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2019-5-5
DdatasheetPDF页码索引
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