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IRFB9N60价格
参考价格：￥5.2834
型号：IRFB9N60APBF 品牌：VISHAY 备注：这里有IRFB9N60多少钱，2026年最近7天走势，今日出价，今日竞价，IRFB9N60批发/采购报价，IRFB9N60行情走势销售排行榜，IRFB9N60报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFB9N60 | Power MOSFET(Vdss=600V, Rds(on)=0.75ohm, Id=9.2A) Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power | IRF |   | |
Power MOSFET(Vdss=600V, Rds(on)=0.75ohm, Id=9.2A) Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power | IRF | | ||
HEXFET Power MOSFET Benefits • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current Applications • Switch Mode Power Supply ( SMPS ) • Uninterruptable Power Supply • High speed power sw | IRF | | ||
Power MOSFET 文件：303.68 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET(Vdss=600V, Rds(on)=0.75ohm, Id=9.2A) | INFINEON 英飞凌 | | ||
Switch mode power supply 文件：302.95 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
IRPLLNR5 Wide Range Input Linear Fluorescent Ballast 文件：331.87 Kbytes Page：21 Pages | IRF | | ||
iscN-Channel MOSFET Transistor 文件：329.36 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Power MOSFET 文件：303.68 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
isc N-Channel Mosfet Transistor DESCRITION ·Designed for high efficiency switch mode power supply. FEATURES ·Drain Current –ID= 8.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple D | ISC 无锡固电 | | ||
Power MOSFET(Vdss=600V, Rds(on)=0.75ohm, Id=9.2A) Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power | IRF | | ||
N-channel Enhancement Mode Power MOSFET 文件：374.44 Kbytes Page：6 Pages | ESTEK 伊泰克电子 | | ||
N-Channel MOSFET 文件：784.87 Kbytes Page：8 Pages | FAIRCHILD 仙童半导体 | | ||
N-Channel MOSFET 文件：784.87 Kbytes Page：8 Pages | FAIRCHILD 仙童半导体 | |
IRFB9N60产品属性
- 类型
描述
- 型号
IRFB9N60
- 制造商
IRF
- 制造商全称
International Rectifier
- 功能描述
Power MOSFET(Vdss=600V, Rds(on)=0.75ohm, Id=9.2A)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
24+/25+ |
TO-220AB |
5400 |
原装正品现货库存价优 |
|||
VISHAY/SILIC |
24+ |
NA |
5000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
IR/VISHAY |
20+ |
TO-220AB |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
IR |
2025+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
VISHAY/威世 |
2022+ |
TO-220AB |
8000 |
只做原装支持实单,有单必成。 |
|||
SILICONIX |
23+ |
NA |
8531 |
专做原装正品,假一罚百! |
|||
INFINEON/IR |
2023+ |
TO-220 |
8635 |
一级代理优势现货,全新正品直营店 |
|||
VISHAY |
24+ |
TO-220 |
12000 |
VISHAY专营进口原装现货假一赔十 |
|||
IR |
2450+ |
TO-220 |
9485 |
只做原装正品现货或订货假一赔十! |
|||
VISHAY/威世 |
25+ |
TO-220 |
30000 |
全新原装现货,价格优势 |
IRFB9N60规格书下载地址
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DdatasheetPDF页码索引
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