IRFB9N60价格

参考价格:¥5.2834

型号:IRFB9N60APBF 品牌:VISHAY 备注:这里有IRFB9N60多少钱,2025年最近7天走势,今日出价,今日竞价,IRFB9N60批发/采购报价,IRFB9N60行情走势销售排行榜,IRFB9N60报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRFB9N60

Power MOSFET(Vdss=600V, Rds(on)=0.75ohm, Id=9.2A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power

IRF

Power MOSFET(Vdss=600V, Rds(on)=0.75ohm, Id=9.2A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power

IRF

HEXFET Power MOSFET

Benefits • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current Applications • Switch Mode Power Supply ( SMPS ) • Uninterruptable Power Supply • High speed power sw

IRF

Power MOSFET

文件:303.68 Kbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=600V, Rds(on)=0.75ohm, Id=9.2A)

Infineon

英飞凌

Switch mode power supply

文件:302.95 Kbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

IRPLLNR5 Wide Range Input Linear Fluorescent Ballast

文件:331.87 Kbytes Page:21 Pages

IRF

iscN-Channel MOSFET Transistor

文件:329.36 Kbytes Page:2 Pages

ISC

无锡固电

Power MOSFET

文件:303.68 Kbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

isc N-Channel Mosfet Transistor

DESCRITION ·Designed for high efficiency switch mode power supply. FEATURES ·Drain Current –ID= 8.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple D

ISC

无锡固电

Power MOSFET(Vdss=600V, Rds(on)=0.75ohm, Id=9.2A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power

IRF

N-channel Enhancement Mode Power MOSFET

文件:374.44 Kbytes Page:6 Pages

ESTEK

伊泰克电子

N-Channel MOSFET

文件:784.87 Kbytes Page:8 Pages

Fairchild

仙童半导体

N-Channel MOSFET

文件:784.87 Kbytes Page:8 Pages

Fairchild

仙童半导体

IRFB9N60产品属性

  • 类型

    描述

  • 型号

    IRFB9N60

  • 制造商

    IRF

  • 制造商全称

    International Rectifier

  • 功能描述

    Power MOSFET(Vdss=600V, Rds(on)=0.75ohm, Id=9.2A)

更新时间:2025-12-30 18:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY
24+
TO-220
12000
VISHAY专营进口原装现货假一赔十
VISHYA
22+
原厂封装
15850
原装正品,实单请联系
VISHAY/SILIC
24+
NA
5000
只做原装正品现货 欢迎来电查询15919825718
IR
NEW
TO-220
19526
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
IR
24+
NA/
16383
原装现货,当天可交货,原型号开票
INFINEON/IR
2023+
TO-220
8635
一级代理优势现货,全新正品直营店
IR
18+
TO-220
85600
保证进口原装可开17%增值税发票
IR
TO-220
68500
一级代理 原装正品假一罚十价格优势长期供货
SILICONIX
23+
NA
8531
专做原装正品,假一罚百!
IR/VISHAY
25+
TO-TO-220AB
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证

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