位置：首页 > IC中文资料第3613页 > IRFB9N30A
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFB9N30A | Power MOSFET(Vdss=300V, Rds(on)=0.45ohm, Id=9.3A) Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power | IRF |   | |
IRFB9N30A | Power MOSFET 文件：176.03 Kbytes Page：8 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
IRFB9N30A | HEXFET® Power MOSFET | Infineon 英飞凌 | | |
HEXFET짰 Power MOSFET Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of ast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at lower di | IRF | | ||
Power MOSFET 文件：176.03 Kbytes Page：8 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET | VishayVishay Siliconix 威世威世科技公司 | | ||
300V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | Fairchild 仙童半导体 | | ||
300V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | Fairchild 仙童半导体 | | ||
300V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | Fairchild 仙童半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=9.0A@ TC=25℃ ·Drain Source Voltage -VDSS=300V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.45Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
N-Channel Enhancement Mode MOSFET 文件：251.58 Kbytes Page：4 Pages | DACO 罡境电子 | |
IRFB9N30A产品属性
- 类型
描述
- 型号
IRFB9N30A
- 功能描述
MOSFET N-CH 300V 9.3A TO-220AB
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
HEXFET®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Vishay Siliconix |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
|||
IR |
2025+ |
TO-220 |
4675 |
全新原厂原装产品、公司现货销售 |
|||
INTERNATIONA |
05+ |
原厂原装 |
4231 |
只做全新原装真实现货供应 |
|||
IR/VISHAY |
20+ |
TO-220 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
IR |
23+ |
TO-220 |
7000 |
||||
IR |
24+ |
NA/ |
20200 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IR |
TO-220 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
IR |
2015+ |
SOP/DIP |
19889 |
一级代理原装现货,特价热卖! |
|||
IR |
24+ |
TO-220AB |
8866 |
||||
IR/VISHAY |
25+ |
TO-TO-220 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
IRFB9N30A芯片相关品牌
IRFB9N30A规格书下载地址
IRFB9N30A参数引脚图相关
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2019-5-5
DdatasheetPDF页码索引
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