HEXFET Power MOSFET

Benefits • Worldwide Best RDS(on) in TO-220 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche SOA • Enhanced body diode dV/dt and dI/dt Capability Applications • High Efficiency Synchronous Rectification in SMPS • Uninterruptible Power S

采用 TO-220 封装的 100V 单 N 沟道功率 MOSFET

\n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 快速开关\n• 175°C 的工作温度;

100V N-Channel Power MOSFET

isc N-Channel MOSFET Transistor

文件：330.58 Kbytes Page：2 Pages

丝印代码：IRFB4310Z；100 V N-Channel MOSFET

Benefits * Improved Gate, Avalanche and Dynamic dV/dt Ruggedness * Fully Characterized Capacitance and Avalanche SOA * Enhanced body diode dV/dt and dI/dt Capability *Lead-Free *Halogen-Free *VDS =100V *ID=120A *RDS(ON) (at VGS=10V)

HEXFET짰Power MOSFET

Benefits • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche SOA • Enhanced body diode dV/dt and dI/dt Capability • Lead-Free Applications • High Efficiency Synchronous Rectification in SMPS • Uninterruptible Power Supply • High Speed Pow

100V 单 N 通道 StrongIRFET ™功率 MOSFET，采用 TO-220 封装

\n优势:\n• 符合 RoHS;

HEXFET Power MOSFET

Benefits • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche SOA • Enhanced body diode dV/dt and dI/dt Capability • Lead-Free Applications • High Efficiency Synchronous Rectification in SMPS • Uninterruptible Power Supply • High Speed Po

HEXFETPower MOSFET

文件：291.29 Kbytes Page：8 Pages

High Efficiency Synchronous Rectification in SMPS

文件：382.49 Kbytes Page：12 Pages

High Efficiency Synchronous Rectification in SMPS

文件：382.49 Kbytes Page：12 Pages

N-Channel MOSFET Transistor

文件：338.84 Kbytes Page：2 Pages

HEXFETPower MOSFET

文件：296.91 Kbytes Page：8 Pages

High Efficiency Synchronous Rectification in SMPS

文件：330.36 Kbytes Page：11 Pages

High Efficiency Synchronous Rectification in SMPS

文件：330.36 Kbytes Page：11 Pages

isc N-Channel MOSFET Transistor

文件：319.59 Kbytes Page：2 Pages

High Efficiency Synchronous Rectification in SMPS

文件：330.36 Kbytes Page：11 Pages

NPN Epitaxial Silicon Transistor

NPN Epitaxial Silicon Transistor • Audio Power Amplifier • High Current Capability : IC=10A • High Power Dissipation • Wide S.O.A • Complement to FJA4210

PNP Epitaxial Silicon Transistor

Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R=10KΩ) • Complement to FJN3310R

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 100 Volt VDS * RDS(on) = 0.5Ω * Spice model available

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * Very low RDS(ON) = .54Ω APPLICATIONS * DC - DC Converters * Solenoids/Relay Drivers for Automotive PARTMARKING DETAIL - ZVN4310

PNP NPN H-bridge

文件：27.89 Kbytes Page：2 Pages