N-Channel MOSFET Transistor

• DESCRITION • High Efficiency Synchronous Rectification in SMPS • Uninterruptible Power Supply • Hard Switched and High Frequency Circuits • FEATURES • Static drain-source on-resistance: RDS(on) ≤3mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lo

TO-220AB 封装的 60V 单 N 通道 IR MOSFET ™

HEXFET Power MOSFET

Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptible Power Supply ● High Speed Power Switching ● Hard Switched and High Frequency Circuits Benefits ● Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● En

60V 单 N 通道 HEXFET 功率 MOSFET，采用无铅无卤素 TO-220AB 封装

HEXFETPower MOSFET

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200 V - 1,000 V Three Phase Bridge 4.0 A - 5.0 A Forward Current 70 ns - 3000 ns Recovery Time

200 V - 1,000 V Three Phase Bridge 4.0 A - 5.0 A Forward Current 70 ns - 3000 ns Recovery Time

ROTARY MOTION | PRECISION SENSOR

Features • Bushing Mount / Sleeve Bearing • 7/8” to 1-3/4” Diameter Bushing Mount • Wirewound 3, 5 and 10-Turn Precision Potentiometers

200 V - 1,000 V Three Phase Bridge

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WASHERS

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31.6 MHz Bandpass Filter

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