N-Channel MOSFET Transistor

• DESCRITION • High Efficiency Synchronous Rectification in SMPS • Uninterruptible Power Supply • Hard Switched and High Frequency Circuits • FEATURES • Static drain-source on-resistance: RDS(on) ≤3mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lo

TO-220AB 封装的 60V 单 N 通道 IR MOSFET ™

\n优势:\n• Optimized for broadest availability from distribution partners\n• Product qualification according to JEDEC standard\n• Optimized for 10V gate-drive voltage (called Normal level)\n• Industry standard through-hole power package\n• High-current carrying capability package (upto 195A, die-size ;

60V 单 N 通道 HEXFET 功率 MOSFET，采用无铅无卤素 TO-220AB 封装

\n优势:\n• 符合 RoHS;

HEXFET Power MOSFET

Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptible Power Supply ● High Speed Power Switching ● Hard Switched and High Frequency Circuits Benefits ● Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● En

HEXFETPower MOSFET

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9-bit latched/registered/pass-thru Futurebus transceiver

DESCRIPTION The FB2031 is a 9-bit latched/registered transceiver featuring a latched, registered or pass-thru mode in either the A-to-B or B-to-A direction. The FB2031 is intended to provide the electrical interface to a high performance wired-OR bus. FEATURES • Latched, registered or straight

DC/DC Converter Applications

Features • Adoption of MBIT processes. • High current capacitance. • Low collector-to-emitter saturation voltage. • High speed switching. • Ultrasmall-sized package permitting CPH3206- applied sets to be made small and slim (0.9mm). • High allowable power dissipation. Applications • Relay

NPN Epitaxial Silicon Transistor

Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=10KΩ, R2=47KΩ) • Complement to FJNS4206R

DC / DC Converter Applications

DC / DC Converter Applications Features • Adoption of MBIT processes. • High current capacitance. • Low collector-to-emitter saturation voltage. • High speed switching. • Ultrasmall package facilitates miniaturization in end products (0.85mm). • High allowable power dissipation. Applicatio

50dB AGC AMP VIDEO AMP

DESCRIPTION The µPC3206GR is Silicon monolithic IC designed for Digital DBS and Digital CATV receivers. This IC consists of a two stage gain control amplifier and a wideband linear video amplifier. This IC is packaged in 20-pin SSOP. Therefore, it can make RF block small. FEATURES • Bro