50dB AGC AMP VIDEO AMP

DESCRIPTION The µPC3206GR is Silicon monolithic IC designed for Digital DBS and Digital CATV receivers. This IC consists of a two stage gain control amplifier and a wideband linear video amplifier. This IC is packaged in 20-pin SSOP. Therefore, it can make RF block small. FEATURES • Bro

50dB AGC amplifier and video amplifier

DESCRIPTION\nThe µPC3206GR is Silicon monolithic IC designed for Digital DBS and Digital CATV receivers. This IC consists of a two stage gain control amplifier and a wideband linear video amplifier. This IC is packaged in 20-pin SSOP. Therefore, it can make RF block small.FEATURES\n• Broadband AGC d • Broadband AGC dynamic range 50 dB (MIN.)\n• Supply voltage 5 V\n• Packaged in 20-pin SSOP suitable for high-density surface mount;

50dB AGC AMP VIDEO AMP

DESCRIPTION The µPC3206GR is Silicon monolithic IC designed for Digital DBS and Digital CATV receivers. This IC consists of a two stage gain control amplifier and a wideband linear video amplifier. This IC is packaged in 20-pin SSOP. Therefore, it can make RF block small. FEATURES • Bro

9-bit latched/registered/pass-thru Futurebus transceiver

DESCRIPTION The FB2031 is a 9-bit latched/registered transceiver featuring a latched, registered or pass-thru mode in either the A-to-B or B-to-A direction. The FB2031 is intended to provide the electrical interface to a high performance wired-OR bus. FEATURES • Latched, registered or straight

DC/DC Converter Applications

Features • Adoption of MBIT processes. • High current capacitance. • Low collector-to-emitter saturation voltage. • High speed switching. • Ultrasmall-sized package permitting CPH3206- applied sets to be made small and slim (0.9mm). • High allowable power dissipation. Applications • Relay

NPN Epitaxial Silicon Transistor

Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=10KΩ, R2=47KΩ) • Complement to FJNS4206R

DC / DC Converter Applications

DC / DC Converter Applications Features • Adoption of MBIT processes. • High current capacitance. • Low collector-to-emitter saturation voltage. • High speed switching. • Ultrasmall package facilitates miniaturization in end products (0.85mm). • High allowable power dissipation. Applicatio