IRF9Z34STR价格

参考价格:¥3.1969

型号:IRF9Z34STRLPBF 品牌:Vishay 备注:这里有IRF9Z34STR多少钱,2026年最近7天走势,今日出价,今日竞价,IRF9Z34STR批发/采购报价,IRF9Z34STR行情走势销售排行榜,IRF9Z34STR报价。
型号 功能描述 生产厂家 企业 LOGO 操作

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:204.41 Kbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:204.41 Kbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

AUTOMOTIVE GRADE Advanced Planar Technology

Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power

IRF

Advanced Planar Technology

Features • Advanced Planar Technology • P-Channel MOSFET • Dynamic dV/dT Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated • Repetitive Avalanche Allowed up to Tjmax • Lead-Free, RoHS Compliant • Automotive Qualified*

KERSEMI

Advanced Process Technology

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

IRF

Mini size of Discrete semiconductor elements

文件:468.13 Kbytes Page:10 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

P-Channel MOSFET Transistor

文件:335.54 Kbytes Page:2 Pages

ISC

无锡固电

IRF9Z34STR产品属性

  • 类型

    描述

  • 型号

    IRF9Z34STR

  • 功能描述

    MOSFET P-Chan 60V 18 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-12-31 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
NA/
3340
原装现货,当天可交货,原型号开票
VishayVishay
NEW-
MOSFETs
100000
Trans MOSFET P-CH Si 60V 18A 3-Pin(2+Tab) D2PAK T/
Vishay Siliconix
22+
TO2633 D2Pak (2 Leads + Tab) T
9000
原厂渠道,现货配单
SILICONIXVISHAY
2450+
NA
9850
只做原厂原装正品现货或订货假一赔十!
SILICONIXVISHAY
21+
NA
5000
百域芯优势 实单必成 可开13点增值税
IR
25+23+
TO-263
37908
绝对原装正品全新进口深圳现货
Vishay
25+
D2PAK
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
SILICONIXVISHAY
22+
N/A
12245
现货,原厂原装假一罚十!
VishayIR
24+
TO-263
1600
INTERNATIONA
05+
原厂原装
6704
只做全新原装真实现货供应

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