丝印代码：IRF9956；30V 2N-Channel MOSFET

Features Generation V Technology Ultra Low On-Resistance Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated Lead-Free VDS (V) =30V ID = 2.2A (VGS = -10V) RDS(ON)

30V 2N-Channel MOSFET

Features Generation V Technology Ultra Low On-Resistance Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated Lead-Free VDS (V) =30V ID = 2.2A (VGS = -10V) RDS(ON)

Power MOSFET(Vdss=30V, Rds(on)=0.10ohm)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

采用 SO-8 封装的 30V 双 N 沟道功率 MOSFET

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

ULTRA LOW ON TESISTANCE

文件：175.44 Kbytes Page：7 Pages

ULTRA LOW ON TESISTANCE

文件：175.44 Kbytes Page：7 Pages

ULTRA LOW ON TESISTANCE

文件：175.44 Kbytes Page：7 Pages

2.7 GHz DDS-Based AgileRF

PRODUCT OVERVIEW The AD9956 is Analog Devices’ newest AgileRF synthesizer. The device is comprised of DDS and PLL circuitry. The DDS features a 14-bit DAC operating at up to 400 MSPS and a 48-bit frequency tuning word (FTW). The PLL circuitry includes a phase frequency detector with scaleable 200

2.7 GHz DDS-Based AgileRF

PRODUCT OVERVIEW The AD9956 is Analog Devices’ newest AgileRF synthesizer. The device is comprised of DDS and PLL circuitry. The DDS features a 14-bit DAC operating at up to 400 MSPS and a 48-bit frequency tuning word (FTW). The PLL circuitry includes a phase frequency detector with scaleable 200

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● 30V, 3.7A, RDS(ON) = 80mΩ @VGS = 10V. RDS(ON) = 110mΩ @VGS = 4.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handing capability. ● Surface Mount Package.

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and wit

N-channel enhancement mode field-effect transistor

Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: Si9956DY in SOT96-1 (SO8). Features ■ Low on-state resistance ■ Fast switching ■ TrenchMOS™ technology. Applications ■ DC to DC convertors ■ DC