Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● 30V, 3.7A, RDS(ON) = 80mΩ @VGS = 10V. RDS(ON) = 110mΩ @VGS = 4.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handing capability. ● Surface Mount Package.

Dual N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 UIS Tested • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Set Top Box • Low Current DC/DC

Dual N-Channel Enhancement Mode Field Effect Transistor

2.7 GHz DDS-Based AgileRF

PRODUCT OVERVIEW The AD9956 is Analog Devices’ newest AgileRF synthesizer. The device is comprised of DDS and PLL circuitry. The DDS features a 14-bit DAC operating at up to 400 MSPS and a 48-bit frequency tuning word (FTW). The PLL circuitry includes a phase frequency detector with scaleable 200

2.7 GHz DDS-Based AgileRF

PRODUCT OVERVIEW The AD9956 is Analog Devices’ newest AgileRF synthesizer. The device is comprised of DDS and PLL circuitry. The DDS features a 14-bit DAC operating at up to 400 MSPS and a 48-bit frequency tuning word (FTW). The PLL circuitry includes a phase frequency detector with scaleable 200

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and wit

N-channel enhancement mode field-effect transistor

Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: Si9956DY in SOT96-1 (SO8). Features ■ Low on-state resistance ■ Fast switching ■ TrenchMOS™ technology. Applications ■ DC to DC convertors ■ DC