Generation V Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

N&P-Channel Complementary MOSFET

General Features «+ N-Channel © Vos=30V. o=B.0A Rosny =17m0@ Vos=10V Rosco =24m0@Vos=4 5V + P-Channel * Vos=-30V,Ip=-6A Rosn =40mQ @Ves=-10V Rosco =60mQ @Vos=-45V «High Power and current handing capabilly «Lead ree products acquired « Surace Mount Package Application

Electronic, 2 C #16 Str TC, PVC-NYL Ins, OA TC Brd, PVC Jkt

Product Description Electronic, 2 Conductor 16AWG (19x29) Tinned Copper, PVC-NYL Insulation, Overall Tinned Copper Braid(90) Shield, PVC Outer Jacket

400 MSPS 14-Bit, 1.8 V CMOS Direct Digital Synthesizer

GENERAL DESCRIPTION The AD9952 is a direct digital synthesizer (DDS) featuring a 14-bit DAC operating up to 400 MSPS. The AD9952 uses advanced DDS technology, coupled with an internal high speed, high performance DAC to form a digitally programmable, complete high frequency synthesizer capable of

400 MSPS 14-Bit, 1.8 V CMOS Direct Digital Synthesizer

GENERAL DESCRIPTION The AD9952 is a direct digital synthesizer (DDS) featuring a 14-bit DAC operating up to 400 MSPS. The AD9952 uses advanced DDS technology, coupled with an internal high speed, high performance DAC to form a digitally programmable, complete high frequency synthesizer capable of

3MTM Single Coated Medical Plastic Tape

文件：48.26 Kbytes Page：2 Pages

400 MSPS 14-Bit, 1.8 V CMOS Direct Digital Synthesizer

文件：569.1 Kbytes Page：28 Pages