Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • P-channel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides inform

Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-11A)

Power MOSFET

Surface-mount\nAvailable in tape and reel\nDynamic dV/dt rating;

Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-11A)

isc P-Channel MOSFET Transistor

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Power MOSFET

文件：197.87 Kbytes Page：10 Pages

Power MOSFET

文件：197.87 Kbytes Page：10 Pages

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • P-channel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides inform

HEXFET짰Power MOSFET

Power MOSFET

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Power MOSFET

文件：197.87 Kbytes Page：10 Pages

Trans MOSFET P-CH 200V 11A 3-Pin(2+Tab) D2PAK T/R

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

Advanced Power MOSFET

BVDSS = -200 V RDS(on) = 0.5 W ID= -11 A FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower Leakage Current : -10 mA (Max.) @ VDS = -200V ● Low RDS(ON) : 0.344 W (Typ.)

Advanced Power MOSFET

BVDSS = -200 V RDS(on) = 0.5Ω ID = -11 A FEATURES ❑ Avalanche Rugged Technology ❑ Rugged Gate Oxide Technology ❑ Lower Input Capacitances ❑ Improved Gate Charge ❑ Extended Safe Operating Area ❑ Lower Leakage Current : -10uA (Max.) @ VDS= -200V ❑ Lower RDS(ON) : 0.383 Ω (Typ.)

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 mA (Max.) @ VDS = -200V ■ Low RDS(ON) : 0.344 Ω (Typ.)

Advanced Power MOSFET

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