P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

-5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs

Description These devices are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for

150 V, P-channel power MOSFET

HEXFET POWER MOSFETS

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

Analog Signal Processor ASP for CD players

Overview The LA9230M and LA9231M are analog signal processing and servo control bipolar ICs designed for use in compact disc players; a compact disc player can be configured by combining these ICs, a CD-DSP such as the LC78620E, and a small number of additional components. The differences between

Analog Signal Processor ASP for CD players

Overview The LA9230M and LA9231M are analog signal processing and servo control bipolar ICs designed for use in compact disc players; a compact disc player can be configured by combining these ICs, a CD-DSP such as the LC78620E, and a small number of additional components. The differences between