IRF840S价格

参考价格:¥3.4325

型号:IRF840SPBF 品牌:Vishay 备注:这里有IRF840S多少钱,2025年最近7天走势,今日出价,今日竞价,IRF840S批发/采购报价,IRF840S行情走势销售排行榜,IRF840S报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF840S

Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SMD-220 is a surface mount power package capable of accommodating die sizes up to HEX-4. It

IRF

IRF840S

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SMD-220 is a surface mount power package capable of accommodating die size up to HEX-4. It provides the

VishayVishay Siliconix

威世科技

IRF840S

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirement • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet

VishayVishay Siliconix

威世科技

IRF840S

Power MOSFET

TRANSYS

IRF840S

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

APEC

富鼎先进电子

IRF840S

Power MOSFET

VishayVishay Siliconix

威世科技

IRF840S

isc N-Channel Mosfet Transistor

文件:297.23 Kbytes Page:2 Pages

ISC

无锡固电

IRF840S

Power MOSFET

文件:145.74 Kbytes Page:1 Pages

TEL

东电电子

IRF840S

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件:100.52 Kbytes Page:4 Pages

A-POWER

富鼎先进电子

IRF840S

N-Channel MOSFET

文件:1.53193 Mbytes Page:5 Pages

KEXIN

科信电子

IRF840S

Available in Tape and Reel

文件:1.55834 Mbytes Page:7 Pages

KERSEMI

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirement • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet

VishayVishay Siliconix

威世科技

HEXFET Power MOSFET

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SMD-220 is a surface mount power package capable of accommodating die sizes up to HEX-4. It

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SMD-220 is a surface mount power package capable of accommodating die size up to HEX-4. It provides the

VishayVishay Siliconix

威世科技

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SMD-220 is a surface mount power package capable of accommodating die size up to HEX-4. It provides the

VishayVishay Siliconix

威世科技

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SMD-220 is a surface mount power package capable of accommodating die size up to HEX-4. It provides the

VishayVishay Siliconix

威世科技

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SMD-220 is a surface mount power package capable of accommodating die size up to HEX-4. It provides the

VishayVishay Siliconix

威世科技

Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SMD-220 is a surface mount power package capable of accommodating die sizes up to HEX-4. It

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SMD-220 is a surface mount power package capable of accommodating die size up to HEX-4. It provides the

VishayVishay Siliconix

威世科技

Fast Switching Characteristic

文件:100.52 Kbytes Page:4 Pages

A-POWER

富鼎先进电子

Power MOSFET

文件:198.2 Kbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

文件:198.2 Kbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

文件:198.2 Kbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Surface Mount Zener Diodes

Features ● lat Handling Surface for Accurate Placement ● tandard Zener Breakdown Voltage Range -3.3V to 68V ● ow Profile Package

KEXIN

科信电子

8A 500V N-channel Enhancement Mode Power MOSFET

文件:1.63311 Mbytes Page:12 Pages

WXDH

东海半导体

9Amps竊?00V N-CHANNEL MOSFET

文件:122.87 Kbytes Page:5 Pages

KIA

可易亚半导体

8A竊?00V N-CHANNEL MOSFET

文件:215.89 Kbytes Page:6 Pages

KIA

可易亚半导体

8A 500V N-CHANNEL MOSFET

文件:242.9 Kbytes Page:7 Pages

KIA

可易亚半导体

IRF840S产品属性

  • 类型

    描述

  • 型号

    IRF840S

  • 功能描述

    MOSFET N-Chan 500V 8.0 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-9-28 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
APEC/富鼎
24+
NA/
18500
优势代理渠道,原装正品,可全系列订货开增值税票
IR
22+
TO-263
5000
FAIRCHILD/仙童
24+
TO263
990000
明嘉莱只做原装正品现货
IR/VISHAY
18+
TO-220
8000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
VISHAY/威世
25+
TO-263
32360
VISHAY/威世全新特价IRF840STRLPBF即刻询购立享优惠#长期有货
VISHAY
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
VISHAY/威世
2450+
TO-263
9850
只做原装正品现货或订货假一赔十!
2023+
3000
进口原装现货
IR
2023+
TO263
5800
进口原装,现货热卖
IR
05+
TO-263
30000
自己公司全新库存绝对有货

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