N-Channel Power MOSFETs, 4.5 A, 450V/500V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high spaed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. • VGS Rated at ± 20V • Silicon Gate for Fast Switchi

N-Channel Power MOSFETs, 4.5 A, 450 V/500 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high spaed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. • VGS Rated at ± 20V • Silicon Gate for Fast Switchi

isc N-Channel MOSFET Transistor

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N-Channel Power MOSFETs, 4.5 A, 450 V/500 V

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Trans MOSFET N-CH 450V 4.5A

丝印代码：IRF8313；30V 2N-Channel Enhancement Mode MOSFET

General Description The is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability ap

丝印代码：IRF8313；30V 2N-Channel Enhancement Mode MOSFET

General Description The is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability ap

丝印代码：IRF8313；30V 2N-Channel Enhancement Mode MOSFET

General Description The is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability ap

HEXFET Power MOSFET

Description The IRF8313PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8313PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switc

HEXFET Power MOSFET

Description The IRF8313PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8313PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switc

采用 SO-8 封装的 30V 双 N 通道 HEXFET 功率 MOSFET

Fully Characterized Avalanche Voltage and Current

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Fully Characterized Avalanche Voltage and Current

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isc N-Channel MOSFET Transistor

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MICROPOWER VOLTAGE SUPERVISOR RESET ACTIVE LOW

DESCRIPTION The TS831 is an ultra low power integrated circuit incorporating a high stability band-gap voltage reference and a comparator with an open drain output. ■ ULTRA LOW POWER CONSUMPTION : 12µA maximum ■ PRECISION RESET THRESHOLD ■ THRESHOLD VOLTAGE: 4.33V typ. FOR TS831-5

NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE

DESCRIPTION The µPA831TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES • Low noise Q1 : NF = 1.2 dB TYP., Q2 : NF = 1.4 dB TYP. @f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain Q1 : |S21e|2 = 9.0 dB TYP., Q2 : |S

LM831 Low Voltage Audio Power Amplifier

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LM831 Low Voltage Audio Power Amplifier

文件：309.36 Kbytes Page：14 Pages

LM831 Low Voltage Audio Power Amplifier

文件：309.36 Kbytes Page：14 Pages