4.4A, 500V, 1.5廓 N-CHANNEL POWER MOSFET

DESCRIPTION ➤ IRF830 is 500V High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; ➤ Advanced termination scheme to provide enhanced voltageblocking capability; ➤ Avalanche Energy Specified; ➤ Source-to-Drain Diode Recove

isc N-Channel MOSFET Transistor

DESCRIPTION • Drain Current –ID= 3.0A@ TC=25℃ • Drain Source Voltage- : VDSS= 500V(Min) • Static Drain-Source On-Resistance : RDS(on) = 1.5Ω(Max) • Fast Switching Speed • Simple Drive Requirements APPLICATIONS • Desinged for high efficiency switch mode power supply.

POWER MOSFET

GENERAL DESCRIPTION This Power MOSFET is designed for low voltage, high speed power switching applications such as switching regulators, conveters, solenoid and relay drivers. FEATURES Higher Current Rating Lower rDS(ON), Lower Capacitances Lower Total Gate Charge Tighter VSD

4.5A 500V N CHANNEL POWER MOSFET

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ZERO ADJUSTMENT KNOB

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Precision Potentiometer

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Extra taps available upon request

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5A 500V N-channel Enhancement Mode Power MOSFET

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PC Mount, Shocksafe 5x20mm Fuses

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