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IRF830A价格

参考价格：￥4.4201

型号：IRF830ALPBF 品牌：VISHAY 备注：这里有IRF830A多少钱，2026年最近7天走势，今日出价，今日竞价，IRF830A批发/采购报价，IRF830A行情走势销售排行榜，IRF830A报价。

型号	功能描述	生产厂家企业	LOGO
IRF830A	Power MOSFET FEATURES • Low Gate Charge QgResults in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
IRF830A	HEXFET Power MOSFET SMPS MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss specified ( See AN 1001) Applications ● Switch Mode Power Su	IRF	IRF
IRF830A	Low Gate Charge Qg Results in Simple Drive Requirement FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Su	KERSEMI	KERSEMI
IRF830A	Power MOSFET • Low gate charge Qg results in simple drive requirement\n• Improved gate, avalanche and dynamic dV/dt ruggedness\n• Fully characterized capacitance and avalanche voltage and current;	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
IRF830A	SMPS MOSFET	INFINEON 英飞凌	INFINEON
IRF830A	isc N-Channel MOSFET Transistor 文件：280.1 Kbytes Page：2 Pages	ISC 无锡固电	ISC
IRF830A	SMPS MOSFET 文件：108.59 Kbytes Page：8 Pages	IRF	IRF
IRF830A	Power MOSFET 文件：1.17388 Mbytes Page：9 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
IRF830A	Power MOSFET 文件：258.649 Kbytes Page：9 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
IRF830AL	Power MOSFET FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance please see www.	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
IRF830AL	Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS)	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
IRF830AL	Power MOSFET(Vdss=500V, Rds(on)max=1.40ohm, Id=5.0A) SMPS MOSFET Benefits ● Low Gate Charge Qg Results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss specified (See AN 1001) Applications ● Switch Mode Power Sup	IRF	IRF
IRF830AL	Power MOSFET Low gate charge Qg results in simple drive requirement\nImproved gate, avalanche and dynamic dV/dt ruggedness\nFully characterized capacitance and avalanche voltage and current;	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
IRF830ALPBF	Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS)	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
IRF830APBF	Power MOSFET FEATURES • Low Gate Charge QgResults in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
IRF830APBF	HEXFET Power MOSFET SMPS MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss specified ( See AN 1001) Applications ● Switch Mode Power Su	IRF	IRF
IRF830APBF	Low Gate Charge Qg Results in Simple Drive Requirement FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Su	KERSEMI	KERSEMI
IRF830AS	Power MOSFET(Vdss=500V, Rds(on)max=1.40ohm, Id=5.0A) SMPS MOSFET Benefits ● Low Gate Charge Qg Results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss specified (See AN 1001) Applications ● Switch Mode Power Sup	IRF	IRF
IRF830AS	Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS)	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
IRF830AS	Power MOSFET FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance please see www.	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
IRF830AS_V01	Power MOSFET FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance please see www.	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
IRF830ASPBF	Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS)	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
IRF830ASTRL	Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS)	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
IRF830ASTRLPBF	Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS)	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
IRF830ASTRLPBF	N-Channel 6 50V (D-S) Power MOSFET FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction	VBSEMI 微碧半导体	VBSEMI
IRF830A_17	Power MOSFET 文件：1.17388 Mbytes Page：9 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
IRF830A_V01	Power MOSFET 文件：258.649 Kbytes Page：9 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
IRF830ALPBF	Power MOSFET 文件：242.75 Kbytes Page：10 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
IRF830ALPBF	HEXFET짰 Power MOSFET 文件：665.92 Kbytes Page：10 Pages	IRF	IRF
IRF830APBF	Power MOSFET 文件：258.649 Kbytes Page：9 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
IRF830APBF-BE3	Power MOSFET 文件：258.649 Kbytes Page：9 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
IRF830ASPBF	Power MOSFET 文件：242.75 Kbytes Page：10 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
IRF830ASPBF	HEXFET짰 Power MOSFET 文件：665.92 Kbytes Page：10 Pages	IRF	IRF
IRF830ASTRLPBFA	Power MOSFET 文件：242.75 Kbytes Page：10 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
SB830DC	D2PAK SURFACE MOUNTSCHOTTKY BARRIER RECTIFIER(VOLTAGE- 20 to 100 Volts CURRENT - 8.0 Amperes) VOLTAGE 20 to 150 Volts CURRENT 8 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MILS-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, high	PANJIT 強茂	PANJIT
SB830FCT	ISOLATION SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 8 Ampere) FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, high current capability • High surg	PANJIT 強茂	PANJIT
SD830CS	SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 8 Ampere) FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capacity • For use in low voltage high frequency inverters, free wheeling	PANJIT 強茂	PANJIT
SD830CT	SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 8 Ampere) FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capacity • For use in low voltage high frequency inverters, free wheeling	PANJIT 強茂	PANJIT
SD830S	SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 8 Ampere) FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capacity • For use in low voltage high frequency inverters, free wheeling	PANJIT 強茂	PANJIT

IRF830A产品属性

类型
描述
Minimum Operating Temperature：
-55°C
Maximum Power Dissipation：
3100mW
Maximum Operating Temperature：
150°C
Maximum Gate Source Voltage：
±30V
Maximum Drain Source Voltage：
500V
Maximum Continuous Drain Current：
5A
Configuration：
Single
Channel Type：
N
Channel Mode：
Enhancement
Category：
Power MOSFET

IRF830A供应商更多...

更新时间：2026-5-24 17:30:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市星宇佳科技有限公司	IRF830APBF	128	220	IR	13	92	询价
深圳市昌和盛利电子有限公司	IRF830A	IR	26+	TO-220	35890	代理全系列销售,全新原装正品,价格优势,长期供应,量大可订	询价
深圳市华斯顿科技有限公司	IRF830ASPBF	IR	25+23+	TO-263	28216	绝对原装正品全新进口深圳现货	询价
深圳市恒凯威科技开发有限公司	IRF830APBF	IR/国际整流器	21+	TO-220	10000	只做原装,质量保证	询价
深圳市恒达亿科技有限公司	IRF830APBF	Vir	25+	QFP	3200	全新原装、诚信经营、公司现货销售	询价
深圳市一线半导体有限公司	IRF830AS	IR	24+	D2-Pak	8866		询价
深圳市恒创达实业有限公司	IRF830APBF	VISHAY	17+	TO-220AB	6200	100%原装正品现货	询价
洪芯国际半导体（深圳）有限公司	IRF830APBF	VISHAY	26+	TO-220	86720	全新原装正品价格最实惠假一赔百	询价
齐创科技(上海,北京,青岛)有限公司	IRF830APBF	VISHAY	23+	TO-220	20000	原装正品,假一罚十	询价
深圳市纳艾斯科技有限公司	IRF830A	IR	24+	TO-220	80000	只做自己库存全新原装进口正品假一赔百可开13%增	询价

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找IC，尽在114IC

IRF830A价格

IRF830A产品属性

IRF830A供应商更多...

IRF830A芯片相关品牌

IRF830A规格书下载地址

IRF830A参数引脚图相关

IRF830A数据表相关新闻

IRF7842TRPBF现货现货，保原装

IRF9317TRPBF

IRF840ASPBF

IRF7862TRPBF 正品原装现货

IRF840ASTRLPBF每一片都来自原厂

IRF8113TRPBF绝对进口原装/假一赔十

DdatasheetPDF页码索引