位置：首页 > IC中文资料第374页 > IRF7309Q
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HEXFETPowerMOSFET 文件：1.97438 Mbytes Page：11 Pages | IRF International Rectifier |  |   | |
T-1SubminiatureLamps T-1¼SubminiatureLamps | GILWAY Gilway Technical Lamp |  | | |
AdvancedPlanarTechnologyLowOn-Resistance Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpow | IRF International Rectifier | | | |
AdvancedPlanarTechnologyLowOn-Resistance Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpow | IRF International Rectifier | | | |
Wire-Thread-Inserts 文件：102.37 Kbytes Page：3 Pages | V-COIL V-COIL THREAD SYSTEM |  | | |
AUTOMOTIVEGRADE 文件：462.33 Kbytes Page：12 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 |  | |
IRF7309Q产品属性
- 类型
描述
- 型号
IRF7309Q
- 功能描述
MOSFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
SOIC-8 |
9600 |
原装现货,优势供应,支持实单! |
|||
IR |
2016+ |
SOP8 |
6528 |
房间原装进口现货假一赔十 |
|||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
IR |
24+ |
SOIC-8 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
IOR |
23+ |
SOP-8 |
67084 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
IR |
23+ |
SOP-8 |
8000 |
只做原装现货 |
|||
IR |
1923+ |
SOP8 |
5000 |
正品原装品质假一赔十 |
|||
VBSEMI/台湾微碧 |
23+ |
SOIC-8 |
50000 |
全新原装正品现货,支持订货 |
|||
IR |
13+;12+ |
SO-8 |
50000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IR |
24+ |
SO-8 |
7500 |
IRF7309Q芯片相关品牌
IRF7309Q规格书下载地址
IRF7309Q参数引脚图相关
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2019-4-25
DdatasheetPDF页码索引
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